{"id":1413,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/p-type-sic-substrate-wafer\/"},"modified":"2026-04-29T15:33:36","modified_gmt":"2026-04-29T07:33:36","slug":"p-type-sic-substrate-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pl\/product\/p-type-sic-substrate-wafer\/","title":{"rendered":"P-type SiC Substrate Wafer"},"content":{"rendered":"
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Semicera\u2019s P-type SiC Substrate Wafer is a key component for developing advanced electronic and optoelectronic devices. These wafers are specifically designed to provide enhanced performance in high-power and high-temperature environments, supporting the growing demand for efficient and durable components.<\/p>\n

The P-type doping in our SiC wafers ensures improved electrical conductivity and charge carrier mobility. This makes them particularly suitable for applications in power electronics, LEDs, and photovoltaic cells, where low power loss and high efficiency are critical.<\/p>\n

Manufactured with the highest standards of precision and quality, Semicera\u2019s P-type SiC wafers offer excellent surface uniformity and minimal defect rates. These characteristics are vital for industries where consistency and reliability are essential, such as aerospace, automotive, and renewable energy sectors.<\/p>\n

Semicera\u2019s commitment to innovation and excellence is evident in our P-type SiC Substrate Wafer. By integrating these wafers into your production process, you ensure that your devices benefit from the exceptional thermal and electrical properties of SiC, enabling them to operate effectively under challenging conditions.<\/p>\n

Investing in Semicera\u2019s P-type SiC Substrate Wafer means choosing a product that combines cutting-edge material science with meticulous engineering. Semicera is dedicated to supporting the next generation of electronic and optoelectronic technologies, providing the essential components needed for your success in the semiconductor industry.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Rzeczy<\/p>\n<\/td>\n

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Produkcja<\/p>\n<\/td>\n

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Badania<\/p>\n<\/td>\n

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Atrapa<\/p>\n<\/td>\n<\/tr>\n

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Parametry kryszta\u0142\u00f3w<\/p>\n<\/td>\n<\/tr>\n

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Polityp<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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B\u0142\u0105d orientacji powierzchni<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametry elektryczne<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azot typu N.<\/p>\n<\/td>\n<\/tr>\n

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Oporno\u015b\u0107<\/p>\n<\/td>\n

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0,015-0,025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametry mechaniczne<\/p>\n<\/td>\n<\/tr>\n

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\u015arednica<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Grubo\u015b\u0107<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska orientacja<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska d\u0142ugo\u015b\u0107<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Wt\u00f3rne mieszkanie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Uk\u0142on<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Osnowa<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 z przodu (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struktura<\/p>\n<\/td>\n<\/tr>\n

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G\u0119sto\u015b\u0107 mikropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Zanieczyszczenia metalowe<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 EA\/CM2<\/p>\n<\/td>\n

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\u22643000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 EA\/CM2<\/p>\n<\/td>\n

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\u22641000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 z przodu<\/p>\n<\/td>\n<\/tr>\n

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Prz\u00f3d<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Wyko\u0144czenie powierzchni<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Cz\u0105steczki<\/p>\n<\/td>\n

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\u226460ea\/wafel (rozmiar \u22650,3 \u03bcm)<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm. Kumulatywna d\u0142ugo\u015b\u0107 \u2264 -diameter<\/p>\n<\/td>\n

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Skumulowana d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Sk\u00f3rka pomara\u0144czowa\/do\u0142y\/plamy\/pr\u0105\u017cki\/p\u0119kni\u0119cia\/zanieczyszczenie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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P\u0142yty kraw\u0119dziowe\/wk\u0142adki\/z\u0142amanie\/sze\u015bciok\u0105tne p\u0142yty<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Obszary politypowe<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Obszar skumulowany \u226420%<\/p>\n<\/td>\n

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Obszar skumulowany \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Przednie oznaczenie lasera<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 wstecz<\/p>\n<\/td>\n<\/tr>\n

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Wstecz<\/p>\n<\/td>\n

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CMP-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm, kumulatywna d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Wady tylne (chipsy kraw\u0119dziowe\/wentylatory)<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 plec\u00f3w<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Oznaczenie lasera z ty\u0142u<\/p>\n<\/td>\n

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1 mm (od g\u00f3rnej kraw\u0119dzi)<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n

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\u015aci\u0119cie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n

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Epi-gotowe z opakowaniem pr\u00f3\u017cniowym<\/p>\n

Opakowanie kaseta z wieloma falami<\/p>\n<\/td>\n<\/tr>\n

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*Uwagi \uff1a \u201eNa\u201d oznacza, \u017ce \u200b\u200bbrak wymienionych element\u00f3w, kt\u00f3re nie wspomniane elementy mog\u0105 zapozna\u0107 si\u0119 z p\u00f3\u0142-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Wafle <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s P-type SiC Substrate Wafer is engineered for superior electronic and optoelectronic applications. These wafers provide exceptional conductivity and thermal stability, making them ideal for high-performance devices. With Semicera, expect precision and reliability in your P-type SiC substrate wafers.<\/p>","protected":false},"featured_media":1110,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[31,42],"product_tag":[],"class_list":{"0":"post-1413","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-more-ceramic-products","7":"product_cat-silicon-nitride-ceramic","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product\/1413","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/comments?post=1413"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media\/1110"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media?parent=1413"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_brand?post=1413"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_cat?post=1413"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_tag?post=1413"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}