{"id":2037,"date":"2025-09-11T05:32:25","date_gmt":"2025-09-11T05:32:25","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/thermal-field-material-for-silicon-carbide-crystal-growth-porous-tantalum-carbide\/"},"modified":"2026-04-29T15:29:21","modified_gmt":"2026-04-29T07:29:21","slug":"thermal-field-material-for-silicon-carbide-crystal-growth-porous-tantalum-carbide","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pl\/product\/thermal-field-material-for-silicon-carbide-crystal-growth-porous-tantalum-carbide\/","title":{"rendered":"Materia\u0142 pola termicznego do wzrostu kryszta\u0142u w\u0119gla krzemu - porowaty w\u0119glik tantalu"},"content":{"rendered":"

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Semicera zapewnia specjalistyczne pow\u0142oki w\u0119glika tantalu (TAC) dla r\u00f3\u017cnych element\u00f3w i no\u015bnik\u00f3w.<\/span> Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC\/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.<\/p>\n

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After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Semicera’ parts for single crystal growth <\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"b917b6b4-7572-47fe-9074-24d33288257c\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Cz\u0119\u015b\u0107 TAC dla wzrostu pojedynczego kryszta\u0142u <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Przeciwko <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Grafit z pier\u015bcieniem pokrytym TAC <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"微信图片_20240227150045\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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z TAC i bez<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"微信图片_20240227150053\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Po u\u017cyciu TAC (po prawej)<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Ponadto \u017cywotno\u015b\u0107 us\u0142ug powlekania TAC Semicera jest d\u0142u\u017csza i bardziej odporna na wysok\u0105 temperatur\u0119 ni\u017c powlekanie SIC. Po d\u0142ugim czasie laboratoryjnych danych pomiarowych nasz TAC mo\u017ce dzia\u0142a\u0107 przez d\u0142ugi czas w maksymalnie 2300 stopni Celsjusza. Oto niekt\u00f3re z naszych pr\u00f3bek:<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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TAC powlekana podatnik <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Innowacyjna <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Grafit z reaktorem pokrytym TAC <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"微信截图_20240227145010\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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(A) Schemat schematu urz\u0105dzenia uprawnego SIC pojedynczego krystalicznego wlewki metod\u0105 PVT (B) Top TAC powlekany wspornik nasion (w tym nasiona SIC) (C) Pokryty grafitowy pier\u015bcie\u0144 z powleczonym TAC<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"P\u00f3\u0142cera <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Maszyna <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Nasza <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

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Porous tantalum carbide is mainly used for gas phase component filtration, adjusting local temperature gradient, guiding material flow direction, controlling leakage, etc. It can be used with another solid tantalum carbide (compact) or tantalum carbide coating from Semicera Technology to form local components with different flow conductance.<\/p>","protected":false},"featured_media":1051,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[63,21],"product_tag":[],"class_list":{"0":"post-2037","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-siliconized-graphite","7":"product_cat-specialty-graphite","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product\/2037","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/comments?post=2037"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media\/1051"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media?parent=2037"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_brand?post=2037"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_cat?post=2037"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_tag?post=2037"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}