{"id":2271,"date":"2025-09-11T13:33:47","date_gmt":"2025-09-11T05:33:47","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/4-inch-sic-substrate-n-type\/"},"modified":"2026-04-29T15:27:33","modified_gmt":"2026-04-29T07:27:33","slug":"4-inch-sic-substrate-n-type","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pl\/product\/4-inch-sic-substrate-n-type\/","title":{"rendered":"4 Inch SiC Substrate N-type"},"content":{"rendered":"

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Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.<\/p>\n

Semicera energy can provide customers with high-quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; In addition, we can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets; We can also customize the epitaxial sheet according to the specific needs of customers, and there is no minimum order quantity.<\/p>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Rzeczy<\/p>\n<\/td>\n

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Produkcja<\/p>\n<\/td>\n

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Badania<\/p>\n<\/td>\n

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Atrapa<\/p>\n<\/td>\n<\/tr>\n

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Parametry kryszta\u0142\u00f3w<\/p>\n<\/td>\n<\/tr>\n

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Polityp<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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B\u0142\u0105d orientacji powierzchni<\/p>\n<\/td>\n

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<11-20 >4±0.15°<\/p>\n<\/td>\n<\/tr>\n

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Parametry elektryczne<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azot typu N.<\/p>\n<\/td>\n<\/tr>\n

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Oporno\u015b\u0107<\/p>\n<\/td>\n

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0.015-0.025ohm·cm<\/p>\n<\/td>\n<\/tr>\n

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Parametry mechaniczne<\/p>\n<\/td>\n<\/tr>\n

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\u015arednica<\/p>\n<\/td>\n

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99.5 – 100mm<\/p>\n<\/td>\n<\/tr>\n

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Grubo\u015b\u0107<\/p>\n<\/td>\n

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350±25 μm<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska orientacja<\/p>\n<\/td>\n

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[1-100]±5°<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska d\u0142ugo\u015b\u0107<\/p>\n<\/td>\n

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32.5±1.5mm<\/p>\n<\/td>\n<\/tr>\n

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Secondary flat position<\/p>\n<\/td>\n

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90° CW from primary flat ±5°. silicon face up<\/p>\n<\/td>\n<\/tr>\n

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Secondary flat length<\/p>\n<\/td>\n

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18±1.5mm<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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≤5 μm<\/p>\n<\/td>\n

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≤10 μm<\/p>\n<\/td>\n

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≤20 μm<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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≤2 μm(5mm*5mm)<\/p>\n<\/td>\n

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≤5 μm(5mm*5mm)<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Uk\u0142on<\/p>\n<\/td>\n

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-15μm ~ 15μm<\/p>\n<\/td>\n

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-35μm ~ 35μm<\/p>\n<\/td>\n

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-45μm ~ 45μm<\/p>\n<\/td>\n<\/tr>\n

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Osnowa<\/p>\n<\/td>\n

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≤20 μm<\/p>\n<\/td>\n

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≤45 μm<\/p>\n<\/td>\n

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≤50 μm<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 z przodu (SI-FACE) (AFM)<\/p>\n<\/td>\n

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Ra≤0.2nm (5μm*5μm)<\/p>\n<\/td>\n<\/tr>\n

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Struktura<\/p>\n<\/td>\n<\/tr>\n

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G\u0119sto\u015b\u0107 mikropipe<\/p>\n<\/td>\n

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≤1 ea\/cm2<\/p>\n<\/td>\n

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≤5 ea\/cm2<\/p>\n<\/td>\n

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≤10 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Zanieczyszczenia metalowe<\/p>\n<\/td>\n

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≤5E10atoms\/cm2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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≤1500 ea\/cm2<\/p>\n<\/td>\n

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≤3000 ea\/cm2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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≤500 ea\/cm2<\/p>\n<\/td>\n

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≤1000 ea\/cm2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 z przodu<\/p>\n<\/td>\n<\/tr>\n

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Prz\u00f3d<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Wyko\u0144czenie powierzchni<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Cz\u0105steczki<\/p>\n<\/td>\n

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≤60ea\/wafer (size≥0.3μm)<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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≤2ea\/mm. Cumulative length ≤Diameter<\/p>\n<\/td>\n

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Cumulative length≤2*Diameter<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Sk\u00f3rka pomara\u0144czowa\/do\u0142y\/plamy\/pr\u0105\u017cki\/p\u0119kni\u0119cia\/zanieczyszczenie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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P\u0142yty kraw\u0119dziowe\/wk\u0142adki\/z\u0142amanie\/sze\u015bciok\u0105tne p\u0142yty<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Obszary politypowe<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Cumulative area≤20%<\/p>\n<\/td>\n

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Cumulative area≤30%<\/p>\n<\/td>\n<\/tr>\n

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Przednie oznaczenie lasera<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 wstecz<\/p>\n<\/td>\n<\/tr>\n

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Wstecz<\/p>\n<\/td>\n

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CMP-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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≤5ea\/mm,Cumulative length≤2*Diameter<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Wady tylne (chipsy kraw\u0119dziowe\/wentylatory)<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 plec\u00f3w<\/p>\n<\/td>\n

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Ra≤0.2nm (5μm*5μm)<\/p>\n<\/td>\n<\/tr>\n

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Oznaczenie lasera z ty\u0142u<\/p>\n<\/td>\n

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1 mm (od g\u00f3rnej kraw\u0119dzi)<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n

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\u015aci\u0119cie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n

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The inner bag is filled with nitrogen and the outer bag is vacuumed.<\/p>\n

Multi-wafer cassette, epi-ready.<\/p>\n<\/td>\n<\/tr>\n

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*Uwagi \uff1a \u201eNa\u201d oznacza, \u017ce \u200b\u200bbrak wymienionych element\u00f3w, kt\u00f3re nie wspomniane elementy mog\u0105 zapozna\u0107 si\u0119 z p\u00f3\u0142-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

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Semicera offers a wide range of 4H-8H SiC wafers. For many years, we have been a manufacturer and supplier of products to the semiconductor and photovoltaic industries. Our main products include: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings. Covering most European and American markets. We look forward to being your long-term partner in China.<\/p>","protected":false},"featured_media":4571,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-2271","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product\/2271","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/comments?post=2271"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media\/4571"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media?parent=2271"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_brand?post=2271"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_cat?post=2271"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_tag?post=2271"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}