Semicera offers a wide range of 4H-8H SiC wafers. For many years, we have been a manufacturer and supplier of products to the semiconductor and photovoltaic industries. Our main products include: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings. Covering most European and American markets. We look forward to being your long-term partner in China.
Silicon carbide (SiC) single crystal is a wide-bandgap semiconductor material with excellent electrical and thermal properties. Compared with silicon (Si), SiC has a much larger band gap, higher thermal conductivity, higher electron saturation velocity, and higher breakdown electric field strength, making it ideal for high-power and high-temperature applications.
Because of these advantages, SiC is widely used in power electronics, new energy vehicles, and high-efficiency energy systems.
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Items |
Production |
Research |
Dummy |
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Crystal Parameters |
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Polytype |
4H |
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Surface orientation error |
<11-20 >4±0.15° |
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Electrical Parameters |
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Dopant |
n-type Nitrogen |
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Resistivity |
0.015-0.025ohm·cm |
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Mechanical Parameters |
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Diameter |
99.5 – 100mm |
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Thickness |
350±25 μm |
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Primary flat orientation |
[1-100]±5° |
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Primary flat length |
32.5±1.5mm |
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Secondary flat position |
90° CW from primary flat ±5°. silicon face up |
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Secondary flat length |
18±1.5mm |
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TTV |
≤5 μm |
≤10 μm |
≤20 μm |
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LTV |
≤2 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
NA |
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Bow |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Warp |
≤20 μm |
≤45 μm |
≤50 μm |
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Front(Si-face) roughness(AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structure |
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Micropipe density |
≤1 ea/cm2 |
≤5 ea/cm2 |
≤10 ea/cm2 |
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Metal impurities |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
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Front Quality |
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Front |
Si |
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Surface finish |
Si-face CMP |
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Particles |
≤60ea/wafer (size≥0.3μm) |
NA |
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Scratches |
≤2ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
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Orange peel/pits/stains/striations/ cracks/contamination |
None |
NA |
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Edge chips/indents/fracture/hex plates |
None |
NA |
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Polytype areas |
None |
Cumulative area≤20% |
Cumulative area≤30% |
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Front laser marking |
None |
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Back Quality |
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Back finish |
C-face CMP |
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Scratches |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
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Back defects (edge chips/indents) |
None |
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Back roughness |
Ra≤0.2nm (5μm*5μm) |
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Back laser marking |
1 mm (from top edge) |
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Edge |
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Edge |
Chamfer |
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Packaging |
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Packaging |
The inner bag is filled with nitrogen, and the outer bag is vacuumed. Multi-wafer cassette, epi-ready. |
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*Notes： “NA” means no request Items not mentioned may refer to SEMI-STD. |
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Semicera provides high-quality SiC substrates and epitaxial wafer solutions to support advanced power semiconductor manufacturing, helping customers achieve higher efficiency, reliability, and performance in demanding applications.
