This product is a 41-piece graphite-based component kit designed for 4-inch MOCVD (Metal-Organic Chemical Vapor Deposition) equipment. Manufactured from high-purity graphite materials, these parts are engineered for high-temperature stability, excellent thermal conductivity, and strong chemical resistance, ensuring stable performance in demanding epitaxial growth environments.
The components are widely used in MOCVD reactor systems for GaN, SiC, and other compound semiconductor epitaxy processes. With precise machining and consistent quality control, the parts help improve thermal field uniformity, enhance process stability, and extend equipment service life.
1. High temperature oxidation resistance:
The oxidation resistance is still very good when the temperature is as high as 1600 ℃.
2. High purity: made by chemical vapor deposition under high-temperature chlorination conditions.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt, and organic reagents.
| SiC-CVD Properties | ||
| Crystal Structure | FCC β phase | |
| Density | g/cm ³ | 3.21 |
| Hardness | Vickers hardness | 2500 |
| Grain Size | μm | 2~10 |
| Chemical Purity | % | 99.99995 |
| Heat Capacity | J·kg-1 ·K-1 | 640 |
| Sublimation Temperature | ℃ | 2700 |
| Felexural Strength | MPa (RT 4-point) | 415 |
| Young’s modulus | Gpa (4pt bend, 1300℃) | 430 |
| Thermal Expansion (C.T.E) | 10-6K-1 | 4.5 |
| Thermal conductivity | (W/mK) | 300 |
