Silicon carbide paddle, also known as silicon carbide cantilever paddle, silicon carbide cantilever beam is a kind of silicon carbide ceramic products after 1850℃ high temperature sintering, but high temperature sintering silicon carbide ceramic is a special ceramic products, by fine particles α-SiC and additives pressed into a blank, in contact with liquid silicon at high temperature, carbon in the blank and infiltration of Si reaction, the formation of β-SiC, And combined with α-SiC, free silicon filled the porosity, so as to obtain high density ceramic materials; It has various superior properties of industrial ceramics.
Semicera’s SiC paddles are engineered for minimal thermal expansion, providing stability and precision in processes where dimensional accuracy is critical. This makes them ideal for applications where wafers are subjected to repeated heating and cooling cycles, as the wafer boat maintains its structural integrity, ensuring consistent performance.
Incorporating Semicera’s silicon carbide diffusion paddles into your production line will enhance your process’s reliability, thanks to their superior thermal and chemical properties. These paddles are perfect for diffusion, oxidation, and annealing processes, ensuring that wafers are handled with care and precision throughout each step.
Innovation is at the core of Semicera’s SiC paddle design. These paddles are tailored to fit seamlessly into existing semiconductor equipment, providing enhanced handling efficiency. The lightweight structure and ergonomic design not only improve wafer transport but also reduce operational downtime, resulting in streamlined production.
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Physical properties of Recrystallized Silicon Carbide |
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Property |
Typical Value |
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Working temperature (°C) |
1600°C (with oxygen), 1700°C (reducing environment) |
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SiC content |
> 99.96% |
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Free Si content |
< 0.1% |
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Bulk density |
2.60-2.70 g/cm3 |
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Apparent porosity |
< 16% |
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Compression strength |
> 600 MPa |
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Cold bending strength |
80-90 MPa (20°C) |
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Hot bending strength |
90-100 MPa (1400°C) |
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Thermal expansion @1500°C |
4.70 10-6/°C |
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Thermal conductivity @1200°C |
23 W/m•K |
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Elastic modulus |
240 GPa |
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Thermal shock resistance |
Extremely good |
