{"id":1399,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/ga2o3-substrate\/"},"modified":"2026-04-29T15:33:46","modified_gmt":"2026-04-29T07:33:46","slug":"ga2o3-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/ga2o3-substrate\/","title":{"rendered":"Substrato Ga2O3"},"content":{"rendered":"
\n
\n
\n
\n
\n
\n
\n
\n
\n
\n

Semicera\u00a0is proud to present the Ga2<\/sub>O3<\/sub> Substrate<\/strong>, a cutting-edge material poised to revolutionize power electronics and optoelectronics. Gallium Oxide (Ga2<\/sub>O3<\/sub>) substrates<\/strong> are known for their ultra-wide bandgap, making them ideal for high-power and high-frequency devices.<\/span><\/p>\n

\u00a0<\/p>\n

Principais recursos:<\/span><\/strong><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0Ultra-Wide Bandgap: Ga2<\/sub>O3 offers a bandgap of approximately 4.8 eV, significantly enhancing its ability to handle high voltages and temperatures compared to traditional materials like Silicon and GaN.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0High Breakdown Voltage: With an exceptional breakdown field, the Ga2<\/sub>O3<\/sub> Substrate<\/strong> is perfect for devices requiring high-voltage operation, ensuring greater efficiency and reliability.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0Thermal Stability: The material\u2019s superior thermal stability makes it suitable for applications in extreme environments, maintaining performance even under harsh conditions.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0Versatile Applications: Ideal for use in high-efficiency power transistors, UV optoelectronic devices, and more, providing a robust foundation for advanced electronic systems.<\/span><\/p>\n

\u00a0<\/p>\n

Experience the future of semiconductor technology with Semicera\u2019s Ga2<\/sub>O3<\/sub> Substrate<\/strong>. Designed to meet the growing demands of high-power and high-frequency electronics, this substrate sets a new standard for performance and durability. Trust Semicera to deliver innovative solutions for your most challenging applications.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\n

Unid<\/p>\n<\/td>\n

\n

Produ\u00e7\u00e3o<\/p>\n<\/td>\n

\n

Pesquisar<\/p>\n<\/td>\n

\n

Fict\u00edcio<\/p>\n<\/td>\n<\/tr>\n

\n

Par\u00e2metros de cristal<\/p>\n<\/td>\n<\/tr>\n

\n

Polytype<\/p>\n<\/td>\n

\n

4H<\/p>\n<\/td>\n<\/tr>\n

\n

Erro de orienta\u00e7\u00e3o da superf\u00edcie<\/p>\n<\/td>\n

\n

4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Par\u00e2metros el\u00e9tricos<\/p>\n<\/td>\n<\/tr>\n

\n

Dopante<\/p>\n<\/td>\n

\n

nitrog\u00eanio do tipo n<\/p>\n<\/td>\n<\/tr>\n

\n

Resistividade<\/p>\n<\/td>\n

\n

0,015-0.025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

\n

Par\u00e2metros mec\u00e2nicos<\/p>\n<\/td>\n<\/tr>\n

\n

Di\u00e2metro<\/p>\n<\/td>\n

\n

150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Grossura<\/p>\n<\/td>\n

\n

350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Orienta\u00e7\u00e3o plana prim\u00e1ria<\/p>\n<\/td>\n

\n

[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Comprimento plano prim\u00e1rio<\/p>\n<\/td>\n

\n

47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Apartamento secund\u00e1rio<\/p>\n<\/td>\n

\n

Nenhum<\/p>\n<\/td>\n<\/tr>\n

\n

TTV<\/p>\n<\/td>\n

\n

\u22645 \u00b5m<\/p>\n<\/td>\n

\n

\u226410 \u00b5m<\/p>\n<\/td>\n

\n

\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

LTV<\/p>\n<\/td>\n

\n

\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

\n

\u22645 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

\n

\u226410 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n<\/tr>\n

\n

Arco<\/p>\n<\/td>\n

\n

-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

\n

-35\u03bcm ~ 35\u03bcm<\/p>\n<\/td>\n

\n

-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

\n

Urdidura<\/p>\n<\/td>\n

\n

\u226435 \u00b5m<\/p>\n<\/td>\n

\n

\u226445 \u00b5m<\/p>\n<\/td>\n

\n

\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

A rugosidade frontal (Si-face) (AFM)<\/p>\n<\/td>\n

\n

Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Estrutura<\/p>\n<\/td>\n<\/tr>\n

\n

Densidade de micropipe<\/p>\n<\/td>\n

\n

<1 ea\/cm2<\/p>\n<\/td>\n

\n

<10 ea\/cm2<\/p>\n<\/td>\n

\n

<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

\n

Impurezas de metal<\/p>\n<\/td>\n

\n

\u22645E10atoms\/cm2<\/p>\n<\/td>\n

\n

N \/ D<\/p>\n<\/td>\n<\/tr>\n

\n

Bpd<\/p>\n<\/td>\n

\n

\u22641500 ea\/cm2<\/p>\n<\/td>\n

\n

\u22643000 ea\/cm2<\/p>\n<\/td>\n

\n

N \/ D<\/p>\n<\/td>\n<\/tr>\n

\n

TSD<\/p>\n<\/td>\n

\n

\u2264500 ea\/cm2<\/p>\n<\/td>\n

\n

\u22641000 ea\/cm2<\/p>\n<\/td>\n

\n

N \/ D<\/p>\n<\/td>\n<\/tr>\n

\n

Qualidade frontal<\/p>\n<\/td>\n<\/tr>\n

\n

Frente<\/p>\n<\/td>\n

\n

Si<\/p>\n<\/td>\n<\/tr>\n

\n

Acabamento superficial<\/p>\n<\/td>\n

\n

Si-face cmp<\/p>\n<\/td>\n<\/tr>\n

\n

Part\u00edculas<\/p>\n<\/td>\n

\n

\u226460ea\/wafer (size\u22650,3\u03bcm)<\/p>\n<\/td>\n

\n

N \/ D<\/p>\n<\/td>\n<\/tr>\n

\n

Arranh\u00f5es<\/p>\n<\/td>\n

\n

\u22645ea\/mm. Comprimento cumulativo \u2264DIAMETER<\/p>\n<\/td>\n

\n

Comprimento cumulativo \u22642*di\u00e2metro<\/p>\n<\/td>\n

\n

N \/ D<\/p>\n<\/td>\n<\/tr>\n

\n

Casca de laranja\/po\u00e7os\/manchas\/estrias\/rachaduras\/contamina\u00e7\u00e3o<\/p>\n<\/td>\n

\n

Nenhum<\/p>\n<\/td>\n

\n

N \/ D<\/p>\n<\/td>\n<\/tr>\n

\n

Chips\/recuos\/fraturas\/placas de fratura\/placas hexadecimais<\/p>\n<\/td>\n

\n

Nenhum<\/p>\n<\/td>\n<\/tr>\n

\n

\u00c1reas de poliateiro<\/p>\n<\/td>\n

\n

Nenhum<\/p>\n<\/td>\n

\n

\u00c1rea cumulativa \u226420%<\/p>\n<\/td>\n

\n

\u00c1rea cumulativa \u226430%<\/p>\n<\/td>\n<\/tr>\n

\n

Marcada a laser dianteira<\/p>\n<\/td>\n

\n

Nenhum<\/p>\n<\/td>\n<\/tr>\n

\n

Qualidade de volta<\/p>\n<\/td>\n<\/tr>\n

\n

Final traseiro<\/p>\n<\/td>\n

\n

CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

\n

Arranh\u00f5es<\/p>\n<\/td>\n

\n

\u22645ea\/mm, comprimento cumulativo\u22642*di\u00e2metro<\/p>\n<\/td>\n

\n

N \/ D<\/p>\n<\/td>\n<\/tr>\n

\n

Defeitos traseiros (chips\/recuos de borda)<\/p>\n<\/td>\n

\n

Nenhum<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosidade de volta<\/p>\n<\/td>\n

\n

Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Marca\u00e7\u00e3o de laser traseiro<\/p>\n<\/td>\n

\n

1 mm (da borda superior)<\/p>\n<\/td>\n<\/tr>\n

\n

Borda<\/p>\n<\/td>\n<\/tr>\n

\n

Borda<\/p>\n<\/td>\n

\n

Chanfro<\/p>\n<\/td>\n<\/tr>\n

\n

Embalagem<\/p>\n<\/td>\n<\/tr>\n

\n

Embalagem<\/p>\n<\/td>\n

\n

Epi pronto com embalagem a v\u00e1cuo<\/p>\n

Embalagem de cassetes de v\u00e1rias linhas<\/p>\n<\/td>\n<\/tr>\n

\n

*Notas \uff1a \u201cNA\u201d significa que nenhum item de solicita\u00e7\u00e3o n\u00e3o mencionado pode se referir ao Semi-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n
\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Ga2O3Substrate\u2013 Unlock new possibilities in power electronics and optoelectronics with Semicera\u2019s Ga2O3Substrate, engineered for exceptional performance in high-voltage and high-frequency applications.<\/p>","protected":false},"featured_media":741,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-1399","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/1399","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=1399"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/741"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=1399"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=1399"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=1399"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=1399"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}