{"id":1403,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/30mm-aluminum-nitride-wafer-substrate\/"},"modified":"2026-04-29T15:33:47","modified_gmt":"2026-04-29T07:33:47","slug":"30mm-aluminum-nitride-wafer-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/30mm-aluminum-nitride-wafer-substrate\/","title":{"rendered":"Substrato de bolas de nitreto de alum\u00ednio de 30 mm"},"content":{"rendered":"
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Semicera<\/em> is proud to present the Substrato de bolas de nitreto de alum\u00ednio de 30 mm<\/strong>, a top-tier material engineered to meet the stringent demands of modern electronic and optoelectronic applications. Aluminum Nitride (AlN) substrates are renowned for their outstanding thermal conductivity and electrical insulation properties, making them an ideal choice for high-performance devices.<\/span><\/p>\n

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Principais recursos:<\/strong><\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0 Exceptional Thermal Conductivity<\/strong>: O Substrato de bolas de nitreto de alum\u00ednio de 30 mm<\/strong> boasts a thermal conductivity of up to 170 W\/mK, significantly higher than other substrate materials, ensuring efficient heat dissipation in high-power applications.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>High Electrical Insulation<\/strong>: With excellent electrical insulating properties, this substrate minimizes cross-talk and signal interference, making it ideal for RF and microwave applications.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>Mechanical Strength<\/strong>: O Substrato de bolas de nitreto de alum\u00ednio de 30 mm<\/strong> offers superior mechanical strength and stability, ensuring durability and reliability even under rigorous operating conditions.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>Versatile Applications<\/strong>: This substrate is perfect for use in high-power LEDs, laser diodes, and RF components, providing a robust and reliable foundation for your most demanding projects.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>Precision Fabrication<\/strong>: Semicera ensures that each wafer substrate is fabricated with the highest precision, offering uniform thickness and surface quality to meet the exacting standards of advanced electronic devices.<\/span><\/p>\n

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Maximize the efficiency and reliability of your devices with Semicera\u2019s Substrato de bolas de nitreto de alum\u00ednio de 30 mm<\/strong>. Our substrates are designed to deliver superior performance, ensuring that your electronic and optoelectronic systems operate at their best. Trust Semicera for cutting-edge materials that lead the industry in quality and innovation.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Unid<\/p>\n<\/td>\n

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Produ\u00e7\u00e3o<\/p>\n<\/td>\n

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Pesquisar<\/p>\n<\/td>\n

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Fict\u00edcio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Erro de orienta\u00e7\u00e3o da superf\u00edcie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros el\u00e9tricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitrog\u00eanio do tipo n<\/p>\n<\/td>\n<\/tr>\n

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Resistividade<\/p>\n<\/td>\n

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0,015-0.025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros mec\u00e2nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e2metro<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Grossura<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orienta\u00e7\u00e3o plana prim\u00e1ria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Comprimento plano prim\u00e1rio<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Apartamento secund\u00e1rio<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35\u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdidura<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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A rugosidade frontal (Si-face) (AFM)<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estrutura<\/p>\n<\/td>\n<\/tr>\n

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Densidade de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Bpd<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Qualidade frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabamento superficial<\/p>\n<\/td>\n

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Si-face cmp<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/wafer (size\u22650,3\u03bcm)<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Arranh\u00f5es<\/p>\n<\/td>\n

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\u22645ea\/mm. Comprimento cumulativo \u2264DIAMETER<\/p>\n<\/td>\n

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Comprimento cumulativo \u22642*di\u00e2metro<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Casca de laranja\/po\u00e7os\/manchas\/estrias\/rachaduras\/contamina\u00e7\u00e3o<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Chips\/recuos\/fraturas\/placas de fratura\/placas hexadecimais<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de poliateiro<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n

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\u00c1rea cumulativa \u226420%<\/p>\n<\/td>\n

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\u00c1rea cumulativa \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcada a laser dianteira<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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Qualidade de volta<\/p>\n<\/td>\n<\/tr>\n

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Final traseiro<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Arranh\u00f5es<\/p>\n<\/td>\n

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\u22645ea\/mm, comprimento cumulativo\u22642*di\u00e2metro<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Defeitos traseiros (chips\/recuos de borda)<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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Rugosidade de volta<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marca\u00e7\u00e3o de laser traseiro<\/p>\n<\/td>\n

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1 mm (da borda superior)<\/p>\n<\/td>\n<\/tr>\n

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Borda<\/p>\n<\/td>\n<\/tr>\n

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Borda<\/p>\n<\/td>\n

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Chanfro<\/p>\n<\/td>\n<\/tr>\n

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Embalagem<\/p>\n<\/td>\n<\/tr>\n

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Embalagem<\/p>\n<\/td>\n

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Epi pronto com embalagem a v\u00e1cuo<\/p>\n

Embalagem de cassetes de v\u00e1rias linhas<\/p>\n<\/td>\n<\/tr>\n

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*Notas \uff1a \u201cNA\u201d significa que nenhum item de solicita\u00e7\u00e3o n\u00e3o mencionado pode se referir ao Semi-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

30mm Aluminum Nitride Wafer Substrate\u2013 Elevate the performance of your electronic and optoelectronic devices with Semicera\u2019s 30mm Aluminum Nitride Wafer Substrate, designed for exceptional thermal conductivity and high electrical insulation.<\/p>","protected":false},"featured_media":675,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[55,26],"product_tag":[],"class_list":{"0":"post-1403","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ain-wafer","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/1403","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=1403"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/675"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=1403"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=1403"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=1403"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=1403"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}