{"id":1412,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/6-inch-n-type-sic-wafer\/"},"modified":"2026-04-29T15:33:35","modified_gmt":"2026-04-29T07:33:35","slug":"6-inch-n-type-sic-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/6-inch-n-type-sic-wafer\/","title":{"rendered":"6 Inch N-type SiC Wafer"},"content":{"rendered":"
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Semicera\u2019s 6 Inch N-type SiC Wafer stands at the forefront of semiconductor technology. Crafted for optimal performance, this wafer excels in high-power, high-frequency, and high-temperature applications, essential for advanced electronic devices.<\/span><\/p>\n

Our 6 Inch N-type SiC wafer features high electron mobility and low on-resistance, which are critical parameters for power devices such as MOSFETs, diodes, and other components. These properties ensure efficient energy conversion and reduced heat generation, enhancing the performance and lifespan of electronic systems.<\/span><\/p>\n

Semicera\u2019s rigorous quality control processes ensure that each SiC wafer maintains excellent surface flatness and minimal defects. This meticulous attention to detail ensures that our wafers meet the stringent requirements of industries such as automotive, aerospace, and telecommunications.<\/span><\/p>\n

In addition to its superior electrical properties, the N-type SiC wafer offers robust thermal stability and resistance to high temperatures, making it ideal for environments where conventional materials might fail. This capability is particularly valuable in applications involving high-frequency and high-power operations.<\/span><\/p>\n

By choosing Semicera\u2019s 6 Inch N-type SiC Wafer, you are investing in a product that represents the pinnacle of semiconductor innovation. We are committed to providing the building blocks for cutting-edge devices, ensuring that our partners in various industries have access to the best materials for their technological advancements.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Unid<\/p>\n<\/td>\n

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Produ\u00e7\u00e3o<\/p>\n<\/td>\n

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Pesquisar<\/p>\n<\/td>\n

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Fict\u00edcio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Erro de orienta\u00e7\u00e3o da superf\u00edcie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros el\u00e9tricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitrog\u00eanio do tipo n<\/p>\n<\/td>\n<\/tr>\n

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Resistividade<\/p>\n<\/td>\n

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0,015-0.025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros mec\u00e2nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e2metro<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Grossura<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orienta\u00e7\u00e3o plana prim\u00e1ria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Comprimento plano prim\u00e1rio<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Apartamento secund\u00e1rio<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35\u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdidura<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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A rugosidade frontal (Si-face) (AFM)<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estrutura<\/p>\n<\/td>\n<\/tr>\n

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Densidade de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Bpd<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Qualidade frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabamento superficial<\/p>\n<\/td>\n

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Si-face cmp<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/wafer (size\u22650,3\u03bcm)<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Arranh\u00f5es<\/p>\n<\/td>\n

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\u22645ea\/mm. Comprimento cumulativo \u2264DIAMETER<\/p>\n<\/td>\n

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Comprimento cumulativo \u22642*di\u00e2metro<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Casca de laranja\/po\u00e7os\/manchas\/estrias\/rachaduras\/contamina\u00e7\u00e3o<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Chips\/recuos\/fraturas\/placas de fratura\/placas hexadecimais<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de poliateiro<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n

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\u00c1rea cumulativa \u226420%<\/p>\n<\/td>\n

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\u00c1rea cumulativa \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcada a laser dianteira<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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Qualidade de volta<\/p>\n<\/td>\n<\/tr>\n

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Final traseiro<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Arranh\u00f5es<\/p>\n<\/td>\n

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\u22645ea\/mm, comprimento cumulativo\u22642*di\u00e2metro<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Defeitos traseiros (chips\/recuos de borda)<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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Rugosidade de volta<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marca\u00e7\u00e3o de laser traseiro<\/p>\n<\/td>\n

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1 mm (da borda superior)<\/p>\n<\/td>\n<\/tr>\n

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Borda<\/p>\n<\/td>\n<\/tr>\n

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Borda<\/p>\n<\/td>\n

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Chanfro<\/p>\n<\/td>\n<\/tr>\n

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Embalagem<\/p>\n<\/td>\n<\/tr>\n

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Embalagem<\/p>\n<\/td>\n

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Epi pronto com embalagem a v\u00e1cuo<\/p>\n

Embalagem de cassetes de v\u00e1rias linhas<\/p>\n<\/td>\n<\/tr>\n

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*Notas \uff1a \u201cNA\u201d significa que nenhum item de solicita\u00e7\u00e3o n\u00e3o mencionado pode se referir ao Semi-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s 6 Inch N-type SiC Wafer offers outstanding thermal conductivity and high electric field strength, making it a superior choice for power and RF devices. This wafer, tailored to meet industry demands, exemplifies Semicera\u2019s commitment to quality and innovation in semiconductor materials.<\/p>","protected":false},"featured_media":686,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1412","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/1412","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=1412"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/686"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=1412"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=1412"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=1412"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=1412"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}