{"id":1418,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/4-inch-high-purity-semi-insulating-hpsi-sic-double-side-polished-wafer-substrate\/"},"modified":"2026-04-29T15:33:38","modified_gmt":"2026-04-29T07:33:38","slug":"4-inch-high-purity-semi-insulating-hpsi-sic-double-side-polished-wafer-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/4-inch-high-purity-semi-insulating-hpsi-sic-double-side-polished-wafer-substrate\/","title":{"rendered":"4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate"},"content":{"rendered":"<div class=\"fl-builder-content fl-builder-content-10063 fl-builder-content-primary fl-builder-global-templates-locked\" data-post-id=\"10063\">\n<div class=\"fl-row fl-row-full-width fl-row-bg-none fl-node-66bee98b76c57\" data-node=\"66bee98b76c57\">\n<div class=\"fl-row-content-wrap\">\n<div class=\"fl-row-content fl-row-full-width fl-node-content\">\n<div class=\"fl-col-group fl-node-66bee98b76c97\" data-node=\"66bee98b76c97\">\n<div class=\"fl-col fl-node-66bee98b76cd6\" data-node=\"66bee98b76cd6\" style=\"width: 100%;\">\n<div class=\"fl-col-content fl-node-content\">\n<div class=\"fl-module fl-module-rich-text fl-node-66bee98b76d14\" data-animation-delay=\"0.0\" data-node=\"66bee98b76d14\">\n<div class=\"fl-module-content fl-node-content\">\n<div class=\"fl-rich-text\">\n<p><span style=\"font-family: arial, helvetica, sans-serif; font-size: medium;\">Semicera&#8217;s 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates are crafted to meet the exacting demands of the semiconductor industry. These substrates are designed with exceptional flatness and purity, offering an optimal platform for cutting-edge electronic devices.<\/span><\/p>\n<p><span style=\"font-family: arial, helvetica, sans-serif; font-size: medium;\">These HPSI SiC wafers are distinguished by their superior thermal conductivity and electrical insulation properties, making them an excellent choice for high-frequency and high-power applications. The double-side polishing process ensures minimal surface roughness, which is crucial for enhancing device performance and longevity.<\/span><\/p>\n<p><span style=\"font-family: arial, helvetica, sans-serif; font-size: medium;\">The high purity of Semicera\u2019s SiC wafers minimizes defects and impurities, leading to higher yield rates and device reliability. These substrates are suitable for a wide range of applications, including microwave devices, power electronics, and LED technologies, where precision and durability are essential.<\/span><\/p>\n<p><span style=\"font-family: arial, helvetica, sans-serif; font-size: medium;\">With a focus on innovation and quality, Semicera utilizes advanced manufacturing techniques to produce wafers that meet the stringent requirements of modern electronics. The double-sided polishing not only improves the mechanical strength but also facilitates better integration with other semiconductor materials.<\/span><\/p>\n<p><span style=\"font-family: arial, helvetica, sans-serif; font-size: medium;\">By choosing Semicera\u2019s 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, manufacturers can leverage the benefits of enhanced thermal management and electrical insulation, paving the way for the development of more efficient and powerful electronic devices. Semicera continues to lead the industry with its commitment to quality and technological advancement.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<div class=\"fl-col-group fl-node-66bee98b76d52\" data-node=\"66bee98b76d52\">\n<div class=\"fl-col fl-node-66bee98b76d91\" data-node=\"66bee98b76d91\" style=\"width: 100%;\">\n<div class=\"fl-col-content fl-node-content\">\n<div class=\"fl-module fl-module-rich-text fl-node-66bee98b76dcf\" data-animation-delay=\"0.0\" data-node=\"66bee98b76dcf\">\n<div class=\"fl-module-content fl-node-content\">\n<div class=\"fl-rich-text\">\n<table border=\"0\" cellspacing=\"0\">\n<tbody>\n<tr>\n<td>\n<p>Unid<\/p>\n<\/td>\n<td>\n<p>Produ\u00e7\u00e3o<\/p>\n<\/td>\n<td>\n<p>Pesquisar<\/p>\n<\/td>\n<td>\n<p>Fict\u00edcio<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Par\u00e2metros de cristal<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Polytype<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>4H<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Erro de orienta\u00e7\u00e3o da superf\u00edcie<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Par\u00e2metros el\u00e9tricos<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Dopante<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>nitrog\u00eanio do tipo n<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Resistividade<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>0,015-0.025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Par\u00e2metros mec\u00e2nicos<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Di\u00e2metro<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Grossura<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Orienta\u00e7\u00e3o plana prim\u00e1ria<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Comprimento plano prim\u00e1rio<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Apartamento secund\u00e1rio<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Nenhum<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>TTV<\/p>\n<\/td>\n<td>\n<p>\u22645 \u00b5m<\/p>\n<\/td>\n<td>\n<p>\u226410 \u00b5m<\/p>\n<\/td>\n<td>\n<p>\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>LTV<\/p>\n<\/td>\n<td>\n<p>\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n<td>\n<p>\u22645 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n<td>\n<p>\u226410 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Arco<\/p>\n<\/td>\n<td>\n<p>-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n<td>\n<p>-35\u03bcm ~ 35\u03bcm<\/p>\n<\/td>\n<td>\n<p>-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Urdidura<\/p>\n<\/td>\n<td>\n<p>\u226435 \u00b5m<\/p>\n<\/td>\n<td>\n<p>\u226445 \u00b5m<\/p>\n<\/td>\n<td>\n<p>\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>A rugosidade frontal (Si-face) (AFM)<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Estrutura<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Densidade de micropipe<\/p>\n<\/td>\n<td>\n<p>&lt;1 ea\/cm2<\/p>\n<\/td>\n<td>\n<p>&lt;10 ea\/cm2<\/p>\n<\/td>\n<td>\n<p>&lt;15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Impurezas de metal<\/p>\n<\/td>\n<td colspan=\"2\">\n<p>\u22645E10atoms\/cm2<\/p>\n<\/td>\n<td>\n<p>N \/ D<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Bpd<\/p>\n<\/td>\n<td>\n<p>\u22641500 ea\/cm2<\/p>\n<\/td>\n<td>\n<p>\u22643000 ea\/cm2<\/p>\n<\/td>\n<td>\n<p>N \/ D<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>TSD<\/p>\n<\/td>\n<td>\n<p>\u2264500 ea\/cm2<\/p>\n<\/td>\n<td>\n<p>\u22641000 ea\/cm2<\/p>\n<\/td>\n<td>\n<p>N \/ D<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Qualidade frontal<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Frente<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Si<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Acabamento superficial<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Si-face cmp<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Part\u00edculas<\/p>\n<\/td>\n<td>\n<p>\u226460ea\/wafer (size\u22650,3\u03bcm)<\/p>\n<\/td>\n<td colspan=\"2\">\n<p>N \/ D<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Arranh\u00f5es<\/p>\n<\/td>\n<td>\n<p>\u22645ea\/mm. Comprimento cumulativo \u2264DIAMETER<\/p>\n<\/td>\n<td>\n<p>Comprimento cumulativo \u22642*di\u00e2metro<\/p>\n<\/td>\n<td>\n<p>N \/ D<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Casca de laranja\/po\u00e7os\/manchas\/estrias\/rachaduras\/contamina\u00e7\u00e3o<\/p>\n<\/td>\n<td colspan=\"2\">\n<p>Nenhum<\/p>\n<\/td>\n<td>\n<p>N \/ D<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Chips\/recuos\/fraturas\/placas de fratura\/placas hexadecimais<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Nenhum<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>\u00c1reas de poliateiro<\/p>\n<\/td>\n<td>\n<p>Nenhum<\/p>\n<\/td>\n<td>\n<p>\u00c1rea cumulativa \u226420%<\/p>\n<\/td>\n<td>\n<p>\u00c1rea cumulativa \u226430%<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Marcada a laser dianteira<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Nenhum<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Qualidade de volta<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Final traseiro<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Arranh\u00f5es<\/p>\n<\/td>\n<td>\n<p>\u22645ea\/mm, comprimento cumulativo\u22642*di\u00e2metro<\/p>\n<\/td>\n<td colspan=\"2\">\n<p>N \/ D<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Defeitos traseiros (chips\/recuos de borda)<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Nenhum<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Rugosidade de volta<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Marca\u00e7\u00e3o de laser traseiro<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>1 mm (da borda superior)<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Borda<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Borda<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Chanfro<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">Embalagem<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td>\n<p>Embalagem<\/p>\n<\/td>\n<td colspan=\"3\">\n<p>Epi pronto com embalagem a v\u00e1cuo<\/p>\n<p>Embalagem de cassetes de v\u00e1rias linhas<\/p>\n<\/td>\n<\/tr>\n<tr>\n<td colspan=\"4\">\n<p style=\"text-align: center;\">*Notas \uff1a \u201cNA\u201d significa que nenhum item de solicita\u00e7\u00e3o n\u00e3o mencionado pode se referir ao Semi-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<div class=\"fl-col-group fl-node-66bee98b76ed0\" data-node=\"66bee98b76ed0\">\n<div class=\"fl-col fl-node-66bee98b76f0d\" data-node=\"66bee98b76f0d\" style=\"width: 100%;\">\n<div class=\"fl-col-content fl-node-content\">\n<div class=\"fl-module fl-module-photo fl-node-66bee98b76f4b\" data-animation-delay=\"0.0\" data-node=\"66bee98b76f4b\">\n<div class=\"fl-module-content fl-node-content\">\n<div class=\"fl-photo fl-photo-align-center\" itemscope=\"\" itemtype=\"http:\/\/schema.org\/ImageObject\">\n<div class=\"fl-photo-content fl-photo-img-png\"> <img decoding=\"async\" alt=\"tech_1_2_size\" class=\"fl-photo-img wp-image-2173\" itemprop=\"image\" src=\"\/wp-content\/uploads\/2025\/09\/e3ee0b4147c636ee.webp\"> <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<div class=\"fl-col-group fl-node-66bee98b76e0d\" data-node=\"66bee98b76e0d\">\n<div class=\"fl-col fl-node-66bee98b76e53\" data-node=\"66bee98b76e53\" style=\"width: 100%;\">\n<div class=\"fl-col-content fl-node-content\">\n<div class=\"fl-module fl-module-photo fl-node-66bee98b76e91\" data-animation-delay=\"0.0\" data-node=\"66bee98b76e91\">\n<div class=\"fl-module-content fl-node-content\">\n<div class=\"fl-photo fl-photo-align-center\" itemscope=\"\" itemtype=\"http:\/\/schema.org\/ImageObject\">\n<div class=\"fl-photo-content fl-photo-img-jpg\"> <img decoding=\"async\" alt=\"Sic Wafers\" class=\"fl-photo-img wp-image-2174\" itemprop=\"image\" src=\"\/wp-content\/uploads\/2025\/09\/4530d9462eb0bb0b.webp\"> <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"<p>Semicera\u2019s 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates are precision-engineered for superior electronic performance. These wafers provide excellent thermal conductivity and electrical insulation, ideal for advanced semiconductor applications. Trust Semicera for unparalleled quality and innovation in wafer technology.<\/p>","protected":false},"featured_media":747,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1418","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/1418","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=1418"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/747"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=1418"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=1418"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=1418"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=1418"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}