{"id":1420,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/3c-sic-wafer-substrate\/"},"modified":"2026-04-29T15:33:39","modified_gmt":"2026-04-29T07:33:39","slug":"3c-sic-wafer-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/3c-sic-wafer-substrate\/","title":{"rendered":"3C-SiC Wafer Substrate"},"content":{"rendered":"
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Semicera 3C-SiC Wafer Substrates are engineered to provide a robust platform for next-generation power electronics and high-frequency devices. With superior thermal properties and electrical characteristics, these substrates are designed to meet the demanding requirements of modern technology.<\/span><\/p>\n

The 3C-SiC (Cubic Silicon Carbide) structure of Semicera Wafer Substrates offers unique advantages, including higher thermal conductivity and a lower thermal expansion coefficient compared to other semiconductor materials. This makes them an excellent choice for devices operating under extreme temperatures and high-power conditions.<\/span><\/p>\n

With a high electrical breakdown voltage and superior chemical stability, Semicera 3C-SiC Wafer Substrates ensure long-lasting performance and reliability. These properties are critical for applications such as high-frequency radar, solid-state lighting, and power inverters, where efficiency and durability are paramount.<\/span><\/p>\n

Semicera’s commitment to quality is reflected in the meticulous manufacturing process of their 3C-SiC Wafer Substrates, ensuring uniformity and consistency across every batch. This precision contributes to the overall performance and longevity of the electronic devices built upon them.<\/span><\/p>\n

By choosing Semicera 3C-SiC Wafer Substrates, manufacturers gain access to a cutting-edge material that enables the development of smaller, faster, and more efficient electronic components. Semicera continues to support technological innovation by providing reliable solutions that meet the evolving demands of the semiconductor industry.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Unid<\/p>\n<\/td>\n

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Produ\u00e7\u00e3o<\/p>\n<\/td>\n

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Pesquisar<\/p>\n<\/td>\n

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Fict\u00edcio<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros de cristal<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Erro de orienta\u00e7\u00e3o da superf\u00edcie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros el\u00e9tricos<\/p>\n<\/td>\n<\/tr>\n

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Dopante<\/p>\n<\/td>\n

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nitrog\u00eanio do tipo n<\/p>\n<\/td>\n<\/tr>\n

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Resistividade<\/p>\n<\/td>\n

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0,015-0.025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Par\u00e2metros mec\u00e2nicos<\/p>\n<\/td>\n<\/tr>\n

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Di\u00e2metro<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Grossura<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orienta\u00e7\u00e3o plana prim\u00e1ria<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Comprimento plano prim\u00e1rio<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Apartamento secund\u00e1rio<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35\u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Urdidura<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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A rugosidade frontal (Si-face) (AFM)<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Estrutura<\/p>\n<\/td>\n<\/tr>\n

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Densidade de micropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurezas de metal<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Bpd<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Qualidade frontal<\/p>\n<\/td>\n<\/tr>\n

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Frente<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Acabamento superficial<\/p>\n<\/td>\n

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Si-face cmp<\/p>\n<\/td>\n<\/tr>\n

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Part\u00edculas<\/p>\n<\/td>\n

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\u226460ea\/wafer (size\u22650,3\u03bcm)<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Arranh\u00f5es<\/p>\n<\/td>\n

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\u22645ea\/mm. Comprimento cumulativo \u2264DIAMETER<\/p>\n<\/td>\n

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Comprimento cumulativo \u22642*di\u00e2metro<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Casca de laranja\/po\u00e7os\/manchas\/estrias\/rachaduras\/contamina\u00e7\u00e3o<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Chips\/recuos\/fraturas\/placas de fratura\/placas hexadecimais<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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\u00c1reas de poliateiro<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n

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\u00c1rea cumulativa \u226420%<\/p>\n<\/td>\n

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\u00c1rea cumulativa \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcada a laser dianteira<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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Qualidade de volta<\/p>\n<\/td>\n<\/tr>\n

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Final traseiro<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Arranh\u00f5es<\/p>\n<\/td>\n

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\u22645ea\/mm, comprimento cumulativo\u22642*di\u00e2metro<\/p>\n<\/td>\n

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N \/ D<\/p>\n<\/td>\n<\/tr>\n

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Defeitos traseiros (chips\/recuos de borda)<\/p>\n<\/td>\n

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Nenhum<\/p>\n<\/td>\n<\/tr>\n

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Rugosidade de volta<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marca\u00e7\u00e3o de laser traseiro<\/p>\n<\/td>\n

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1 mm (da borda superior)<\/p>\n<\/td>\n<\/tr>\n

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Borda<\/p>\n<\/td>\n<\/tr>\n

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Borda<\/p>\n<\/td>\n

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Chanfro<\/p>\n<\/td>\n<\/tr>\n

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Embalagem<\/p>\n<\/td>\n<\/tr>\n

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Embalagem<\/p>\n<\/td>\n

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Epi pronto com embalagem a v\u00e1cuo<\/p>\n

Embalagem de cassetes de v\u00e1rias linhas<\/p>\n<\/td>\n<\/tr>\n

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*Notas \uff1a \u201cNA\u201d significa que nenhum item de solicita\u00e7\u00e3o n\u00e3o mencionado pode se referir ao Semi-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera 3C-SiC Wafer Substrates offer superior thermal conductivity and high electrical breakdown voltage, ideal for power electronic and high-frequency devices. These substrates are precision-engineered for optimal performance in harsh environments, ensuring reliability and efficiency. Choose Semicera for innovative and advanced solutions.<\/p>","protected":false},"featured_media":1082,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1420","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/1420","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=1420"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/1082"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=1420"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=1420"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=1420"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=1420"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}