{"id":1503,"date":"2025-09-11T05:29:26","date_gmt":"2025-09-11T05:29:26","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/tantalum-carbid-coating-half-moon\/"},"modified":"2026-04-29T15:33:07","modified_gmt":"2026-04-29T07:33:07","slug":"tantalum-carbid-coating-half-moon","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/tantalum-carbid-coating-half-moon\/","title":{"rendered":"Tantalum Carbid Coating meia-lua"},"content":{"rendered":"

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A Semicera fornece revestimentos especializados de carboneto de t\u00e2ntalo (TAC) para v\u00e1rios componentes e transportadores.<\/span> Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC\/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.<\/p>\n

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With the advent of 8-inch silicon carbide (SiC) wafers, the requirements for various semiconductor processes have become increasingly stringent, especially for epitaxy processes where temperatures can exceed 2000 degrees Celsius. Traditional susceptor materials, such as graphite coated with silicon carbide, tend to sublimate at these high temperatures, disrupting the epitaxy process. However, CVD tantalum carbide (TaC) effectively addresses this issue, withstanding temperatures up to 2300 degrees Celsius and offering a longer service life. Contact Semicera’s <\/span>Tantalum Carbid Coating meia-lua<\/span> to explore more about our advanced solutions.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"Alta <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Parte tac para crescimento \u00fanico cristal <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Coating <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Grafite com anel revestido com TAC <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"微信图片_20240227150045\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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com e sem TAC<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"微信图片_20240227150053\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Depois de usar o TAC (\u00e0 direita)<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings.<\/b> Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:<\/p>\n

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\"3\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Susceptador revestido com TAC<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"4\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Grafite com reator revestido com TAC<\/span> <\/h3>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"0(1)\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Local <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Local <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"M\u00e1quina <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Ware <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Processamento <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Nosso <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

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With the advent of 8-inch silicon carbide (SiC) wafers, the requirements for various semiconductor processes have become increasingly stringent, especially for epitaxy processes where temperatures can exceed 2000 degrees Celsius. Traditional susceptor materials, such as graphite coated with silicon carbide, tend to sublimate at these high temperatures, disrupting the epitaxy process. However, CVD tantalum carbide (TaC) effectively addresses this issue, withstanding temperatures up to 2300 degrees Celsius and offering a longer service life. Contact Semicera’sTantalum Carbid Coating Half-moonto explore more about our advanced solutions.<\/p>","protected":false},"featured_media":859,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[15],"product_tag":[],"class_list":{"0":"post-1503","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-uncategorized","8":"first","9":"instock","10":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/1503","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=1503"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/859"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=1503"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=1503"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=1503"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=1503"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}