{"id":2257,"date":"2025-09-11T13:33:40","date_gmt":"2025-09-11T05:33:40","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/41-pieces-4-inch-graphite-base-mocvd-equipment-parts\/"},"modified":"2026-04-29T15:27:39","modified_gmt":"2026-04-29T07:27:39","slug":"41-pieces-4-inch-graphite-base-mocvd-equipment-parts","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/41-pieces-4-inch-graphite-base-mocvd-equipment-parts\/","title":{"rendered":"41 pieces 4 inch graphite base MOCVD equipment parts"},"content":{"rendered":"

<\/p>\n

\n
\n
\n
\n
\n
\n
\n
\n
\n

Descri\u00e7\u00e3o<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming a SiC protective layer.<\/p>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\"41<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n

Principais caracter\u00edsticas<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n

1. Resist\u00eancia a oxida\u00e7\u00e3o de alta temperatura:
the oxidation resistance is still very good when the temperature is as high as 1600 \u2103.
2. Alta pureza: feita por deposi\u00e7\u00e3o de vapor qu\u00edmico sob condi\u00e7\u00e3o de clora\u00e7\u00e3o de alta temperatura.
3. Resist\u00eancia \u00e0 eros\u00e3o: alta dureza, superf\u00edcie compacta, part\u00edculas finas.
4. Resist\u00eancia \u00e0 corros\u00e3o: \u00e1cido, \u00e1lcalis, sal e reagentes org\u00e2nicos.<\/p>\n

<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n

Principais especifica\u00e7\u00f5es do revestimento CVD-SIC<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Propriedades SIC-CVD<\/td>\n<\/tr>\n
Estrutura cristalina<\/td>\nFCC β phase<\/td>\n<\/tr>\n
Densidade<\/td>\ng\/cm ³<\/td>\n3.21<\/td>\n<\/tr>\n
Dureza<\/td>\nVickers dureza<\/td>\n2500<\/td>\n<\/tr>\n
Tamanho de gr\u00e3o<\/td>\nμm<\/td>\n2~10<\/td>\n<\/tr>\n
Pureza qu\u00edmica<\/td>\n%<\/td>\n99.99995<\/td>\n<\/tr>\n
Capacidade de calor<\/td>\nJ·kg-1 ·K-1<\/td>\n640<\/td>\n<\/tr>\n
Temperatura da sublima\u00e7\u00e3o<\/td>\n\u2103<\/td>\n2700<\/td>\n<\/tr>\n
For\u00e7a felexural<\/td>\nMPa  (RT 4-point)<\/td>\n415<\/td>\n<\/tr>\n
Young’ s Modulus<\/td>\nGPA (4pt Bend, 1300 \u2103)<\/td>\n430<\/td>\n<\/tr>\n
Expans\u00e3o t\u00e9rmica (CTE)<\/td>\n10-6K-1<\/td>\n4.5<\/td>\n<\/tr>\n
Condutividade t\u00e9rmica<\/td>\n(W\/mk)<\/td>\n300<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n
\n
\"Local<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Local<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"M\u00e1quina<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Processamento<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Ware<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Nosso<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

<\/p>\n

\u25cf Product introduction and use: Placed 41 pieces of 4 inch substrate, used for the growth of blue-green epitaxial films in LED production<\/div>\n
\u25cf Device location of the product: in the reaction chamber, in direct contact with the wafer<\/div>\n
\u25cf Main downstream products: LED chips<\/div>\n
\u25cf Main end market: LED<\/div>","protected":false},"featured_media":4490,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[16,49],"product_tag":[],"class_list":{"0":"post-2257","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-cvd-sic","7":"product_cat-mocvd-epitaxial-parts","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/2257","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=2257"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/4490"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=2257"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=2257"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=2257"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=2257"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}