{"id":2259,"date":"2025-09-11T13:33:40","date_gmt":"2025-09-11T05:33:40","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/semiconductor-silicon-based-gan-epitaxy\/"},"modified":"2026-04-29T15:27:40","modified_gmt":"2026-04-29T07:27:40","slug":"semiconductor-silicon-based-gan-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pt\/product\/semiconductor-silicon-based-gan-epitaxy\/","title":{"rendered":"Semiconductor Silicon based GaN epitaxy"},"content":{"rendered":"
\n
\n
\n
\n
\n
\n
\n
\n
\n
\n
\"Silicon-based<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n

Descri\u00e7\u00e3o do produto<\/p>\n

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.<\/p>\n

Principais caracter\u00edsticas:<\/p>\n

1. Resist\u00eancia a oxida\u00e7\u00e3o de alta temperatura:<\/p>\n

A resist\u00eancia da oxida\u00e7\u00e3o ainda \u00e9 muito boa quando a temperatura \u00e9 t\u00e3o alta quanto 1600 C.<\/p>\n

2. High purity : made by chemical vapor deposition under high temperature chlorination condition.<\/p>\n

3. Resist\u00eancia \u00e0 eros\u00e3o: alta dureza, superf\u00edcie compacta, part\u00edculas finas.<\/p>\n

4. Resist\u00eancia \u00e0 corros\u00e3o: \u00e1cido, \u00e1lcalis, sal e reagentes org\u00e2nicos.<\/p>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n

Principais especifica\u00e7\u00f5es do revestimento CVD-SIC<\/span><\/h3>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\n

Propriedades SIC-CVD<\/p>\n<\/td>\n<\/tr>\n

\n

Estrutura cristalina<\/p>\n<\/td>\n

\n

FCC β phase<\/p>\n<\/td>\n<\/tr>\n

\n

Densidade<\/p>\n<\/td>\n

\n

g\/cm ³<\/p>\n<\/td>\n

\n

3.21<\/p>\n<\/td>\n<\/tr>\n

\n

Dureza<\/p>\n<\/td>\n

\n

Vickers dureza<\/p>\n<\/td>\n

\n

2500<\/p>\n<\/td>\n<\/tr>\n

\n

Tamanho de gr\u00e3o<\/p>\n<\/td>\n

\n

μm<\/p>\n<\/td>\n

\n

2~10<\/p>\n<\/td>\n<\/tr>\n

\n

Pureza qu\u00edmica<\/p>\n<\/td>\n

\n

%<\/p>\n<\/td>\n

\n

99.99995<\/p>\n<\/td>\n<\/tr>\n

\n

Capacidade de calor<\/p>\n<\/td>\n

\n

J·kg-1 ·K-1<\/p>\n<\/td>\n

\n

640<\/p>\n<\/td>\n<\/tr>\n

\n

Temperatura da sublima\u00e7\u00e3o<\/p>\n<\/td>\n

\n

\u2103<\/p>\n<\/td>\n

\n

2700<\/p>\n<\/td>\n<\/tr>\n

\n

For\u00e7a felexural<\/p>\n<\/td>\n

\n

MPa  (RT 4-point)<\/p>\n<\/td>\n

\n

415<\/p>\n<\/td>\n<\/tr>\n

\n

Young’ s Modulus<\/p>\n<\/td>\n

\n

GPA (4pt Bend, 1300 \u2103)<\/p>\n<\/td>\n

\n

430<\/p>\n<\/td>\n<\/tr>\n

\n

Expans\u00e3o t\u00e9rmica (CTE)<\/p>\n<\/td>\n

\n

10-6K-1<\/p>\n<\/td>\n

\n

4.5<\/p>\n<\/td>\n<\/tr>\n

\n

Condutividade t\u00e9rmica<\/p>\n<\/td>\n

\n

(W\/mk)<\/p>\n<\/td>\n

\n

300<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\n
\n
\n
\"74\" <\/a><\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\"64\" <\/a><\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\"9\" <\/a><\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\n
\n
\n
\"Local<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Local<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"M\u00e1quina<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Processamento<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

\n
\n
\n
\"Nosso<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n

 <\/p>\n<\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera Energy Technology Co., Ltd. is a leading supplier of advanced semiconductor ceramics and the only manufacturer in China that can simultaneously provide high-purity silicon carbide ceramic(especially the Recrystallized SiC) and CVD SiC coating. In addition, our company is also committed to ceramic fields such as alumina, aluminum nitride, zirconia, and silicon nitride, etc.<\/p>","protected":false},"featured_media":4586,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[16,17],"product_tag":[],"class_list":{"0":"post-2259","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-cvd-sic","7":"product_cat-si-epitaxial-parts","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product\/2259","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/comments?post=2259"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media\/4586"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/media?parent=2259"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_brand?post=2259"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_cat?post=2259"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pt\/wp-json\/wp\/v2\/product_tag?post=2259"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}