Product introduction and use: Placed 41 pieces of 4 hours substrate, used for growing LED with blue-green epitaxial filmDevice location of the product: in the reaction chamber, in direct contact with the waferMain downstream products: LED chipsMain end market: LED
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming a SiC protective layer.
1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 ℃.
2. High purity: made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.
| خصائص SIC-CVD | ||
| بنية البلورة | FCC β phase | |
| كثافة | g/cm ³ | 3.21 |
| صلابة | فيكرز صلابة | 2500 |
| حجم الحبوب | μm | 2~10 |
| نقاء كيميائي | % | 99.99995 |
| سعة الحرارة | J·kg-1 ·K-1 | 640 |
| درجة حرارة التسامي | ℃ | 2700 |
| قوة فردية | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| التمدد الحراري (CTE) | 10-6K-1 | 4.5 |
| الموصلية الحرارية | (W/MK) | 300 |
