Silicon carbide is a new type of ceramics with high cost performance and excellent material properties. Due to features like high strength and hardness, high temperature resistance, great thermal conductivity and chemical corrosion resistance, Silicon Carbide can almost withstand all chemical medium. Therefore, SiC are widely used in oil mining, chemical, machinery and airspace, even nuclear energy and the military have their special demands on SIC. Some normal application we can offer are seal rings for pump, valve and protective armor etc.
مقاومة أكسدة ارتفاع درجة الحرارة
مقاومة تآكل ممتازة
مقاومة تآكل جيدة
معامل عالٍ من الموصلية الحرارية
التشحيم الذاتي ، منخفضة الكثافة
صلابة عالية
تصميم مخصص.
-Wear-resistant Field: bushing, plate, sandblasting nozzle,cyclone lining, grinding barrel,etc…
-High Temperature Field: siC Slab, Quenching Furnace Tube,Radiant Tube,crucible,Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC boat,Kiln car Structure,Setter,etc.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck,sic paddle, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway,etc.
-Silicon Carbide Seal Field: all kinds of sealing ring, bearing, bushing, etc.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller,etc.
-Lithium Battery Field
| ملكية | قيمة | طريقة |
| كثافة | 3.21 جم/سم مكعب | مغسلة والأبعاد |
| حرارة محددة | 0.66 J/G ° K. | فلاش الليزر النبضي |
| قوة الانثناء | 450 MPa560 MPa | 4 نقاط الانحناء ، RT4 Point Bend ، 1300 درجة |
| الكسر المتانة | 2.94 MPa M1/2 | microindentation |
| صلابة | 2800 | فيكرز ، 500 جرام |
| معامل معامل مرن | 450 GPA430 GPA | 4 Pt Bend ، RT4 Pt Bend ، 1300 درجة مئوية |
| حجم الحبوب | 2 - 10 ميكرون | SEM |
| الموصلية الحرارية | 250 W/m °K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 °K | Room temp to 950 °C, silica dilatometer |
| غرض | وحدة | Data | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC content | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Free silicon content | % | 15 | 0 | 0 | 0 | 0 |
| Max service temperature | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| كثافة | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Open porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Bending strength 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Bending strength 1200℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200℃ | W/m.K | 45 | 19.6 | 100-120 | 36.6 | / |
| معامل التمدد الحراري | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.
