Si Epitaxy– Achieve superior device performance with Semicera’s Si Epitaxy, offering precision-grown silicon layers for advanced semiconductor applications.
شبه introduces its high-quality سي epitaxy services, designed to meet the exacting standards of today’s semiconductor industry. Epitaxial silicon layers are critical for the performance and reliability of electronic devices, and our Si Epitaxy solutions ensure that your components achieve optimal functionality.
Precision-Grown Silicon Layers شبه understands that the foundation of high-performance devices lies in the quality of the materials used. Our سي epitaxy process is meticulously controlled to produce silicon layers with exceptional uniformity and crystal integrity. These layers are essential for applications ranging from microelectronics to advanced power devices, where consistency and reliability are paramount.
Optimized for Device Performance The سي epitaxy services offered by Semicera are tailored to enhance the electrical properties of your devices. By growing high-purity silicon layers with low defect densities, we ensure that your components perform at their best, with improved carrier mobility and minimized electrical resistivity. This optimization is critical for achieving the high-speed and high-efficiency characteristics demanded by modern technology.
Versatility in Applications شبه’s سي epitaxy is suitable for a wide range of applications, including the production of CMOS transistors, power MOSFETs, and bipolar junction transistors. Our flexible process allows for customization based on the specific requirements of your project, whether you need thin layers for high-frequency applications or thicker layers for power devices.
Superior Material Quality Quality is at the heart of everything we do at Semicera. Our سي epitaxy process uses state-of-the-art equipment and techniques to ensure that each silicon layer meets the highest standards of purity and structural integrity. This attention to detail minimizes the occurrence of defects that could impact device performance, resulting in more reliable and longer-lasting components.
Commitment to Innovation شبه is committed to staying at the forefront of semiconductor technology. Our سي epitaxy services reflect this commitment, incorporating the latest advancements in epitaxial growth techniques. We continuously refine our processes to deliver silicon layers that meet the evolving needs of the industry, ensuring that your products remain competitive in the market.
Tailored Solutions for Your Needs Understanding that every project is unique, شبه offers customized سي epitaxy solutions to match your specific needs. Whether you require particular doping profiles, layer thicknesses, or surface finishes, our team works closely with you to deliver a product that meets your precise specifications.
أغراض |
إنتاج |
بحث |
دمية |
المعلمات البلورية |
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polytype |
4H |
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خطأ في اتجاه السطح |
4±0.15° |
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المعلمات الكهربائية |
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Dopant |
نيتروجين من النوع |
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المقاومة |
0.015-0.025OHM · سم |
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المعلمات الميكانيكية |
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قطر |
150.0 ± 0.2mm |
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سماكة |
350 ± 25 ميكرون |
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الاتجاه المسطح الأولي |
[1-100]±5° |
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طول مسطح أساسي |
47.5 ± 1.5mm |
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شقة ثانوية |
لا أحد |
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TTV |
≤5 ميكرون |
≤10 ميكرون |
≤15 ميكرون |
LTV |
≤3 ميكرون (5 ملم*5 ملم) |
≤5 ميكرون (5 ملم*5 ملم) |
≤10 ميكرون (5 ملم*5 ملم) |
قَوس |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
الاعوجاج |
≤35 ميكرون |
≤45 ميكرون |
≤55 ميكرون |
الخشونة الأمامية (si-face) (AFM) |
Ra≤0.2nm (5μm*5μm) |
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بناء |
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كثافة micropipe |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
الشوائب المعدنية |
≤5E10atoms/cm2 |
نا |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
نا |
TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
نا |
الجودة الأمامية |
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أمام |
سي |
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الانتهاء من السطح |
Si-Face CMP |
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الجزيئات |
≤60A/WEFR (SIZE 30.3μM) |
نا |
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الخدوش |
≤5ea/مم. الطول التراكمي ≤Diameter |
الطول التراكمي ≤2*القطر |
نا |
قشر البرتقال/الحفر/البقع/الدماغ/الشقوق/التلوث |
لا أحد |
نا |
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رقائق الحافة/المسافات البادئة/الكسر/الألواح السداسية |
لا أحد |
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المناطق polytype |
لا أحد |
منطقة تراكمية 20% |
التراكمية منطقة ≤30% |
وضع علامة ليزر الأمامية |
لا أحد |
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جودة الظهر |
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الانتهاء من الظهر |
C-Face CMP |
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الخدوش |
≤5EA/MM ، الطول التراكمي ≤2*القطر |
نا |
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عيوب الظهر (رقائق الحافة/المسافات البادئة) |
لا أحد |
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خشونة الظهر |
Ra≤0.2nm (5μm*5μm) |
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عودة ليزر العلامات |
1 مم (من الحافة العليا) |
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حافة |
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حافة |
شامفر |
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التغليف |
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التغليف |
جاهز لـ EPI مع تغليف فراغ عبوات الكاسيت متعددة الفرس |
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*الملاحظات : "NA" تعني عدم وجود عناصر طلب لم يتم ذكرها قد تشير إلى Semi. |