Key Factors in Producing High-Purity SiC Crystals for Advanced Applications
2025-07-02
SiC crystal growth requires strict control of purity, temperature, and process parameters to produce high-quality, defect-free silicon carbide crystals.
SiC crystal growth requires strict control of purity, temperature, and process parameters to produce high-quality, defect-free silicon carbide crystals.
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Semicera Semiconductor Technology Co., Ltd., based in Ningbo, Zhejiang Province, China, was established in January 2018.
Semicera Semiconductor integrates R&D and production with dual research centers and three production bases, supporting 50 production lines and 200+ employees.
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