GA2O3 Epitaxy

Ga2O3Epitaxy– Enhance your high-power electronic and optoelectronic devices with Semicera’s Ga2O3Epitaxy, offering unmatched performance and reliability for advanced semiconductor applications.

Semizelle proudly offers Ga₂O₃ Epitaxy, a state-of-the-art solution designed to push the boundaries of power electronics and optoelectronics. This advanced epitaxial technology leverages the unique properties of Gallium Oxide (Ga₂O₃) to deliver superior performance in demanding applications.

Schlüsselmerkmale:

• Exceptional Wide Bandgap: Ga₂O₃ Epitaxy features an ultra-wide bandgap, allowing for higher breakdown voltages and efficient operation in high-power environments.

• High Thermal Conductivity: The epitaxial layer provides excellent thermal conductivity, ensuring stable operation even under high-temperature conditions, making it ideal for high-frequency devices.

• Superior Material Quality: Achieve high crystal quality with minimal defects, ensuring optimal device performance and longevity, especially in critical applications such as power transistors and UV detectors.

• Versatility in Applications: Perfectly suited for power electronics, RF applications, and optoelectronics, providing a reliable foundation for next-generation semiconductor devices.

Discover the potential of Ga₂O₃ Epitaxy with Semicera’s innovative solutions. Our epitaxial products are designed to meet the highest standards of quality and performance, enabling your devices to operate with maximum efficiency and reliability. Choose Semicera for cutting-edge semiconductor technology.

Artikel	Produktion	Forschung	Dummy
Kristallparameter
Polytype	4H
Oberflächenorientierungsfehler	4±0.15°
Elektrische Parameter
Dopant	Stickstoff vom Typ N
Widerstand	0,015-0.025OHM · cm
Mechanische Parameter
Durchmesser	150,0 ± 0,2 mm
Dicke	350 ± 25 µm
Primäre flache Orientierung	[1-100]±5°
Primäre flache Länge	47,5 ± 1,5 mm
Sekundäre flache	Keiner
Ttv	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5 mm*5 mm)	≤5 μm (5 mm*5 mm)	≤10 μm (5 mm*5 mm)
Bogen	-15 μm ~ 15 μm	-35 μm ~ 35 μm	-45 μm ~ 45 μm
Kette	≤35 µm	≤45 µm	≤55 µm
Front (Si-Face) Rauheit (AFM)	Ra ≤ 0,2 nm (5 & mgr; m*5 μm)
Struktur
Mikropipe -Dichte	<1 EA/CM2	<10 EA/CM2	<15 EA/CM2
Metallverunreinigungen	≤5E10atoms/cm2		N / A
BPD	≤1500 EA/CM2	≤3000 EA/CM2	N / A
TSD	≤500 EA/CM2	≤1000 EA/CM2	N / A
Frontqualität
Front	Si
Oberflächenbeschaffung	Si-Face CMP
Partikel	≤60ea/Wafer (Größe ≥ 0,3 μm)	N / A
Kratzer	≤5ea/mm. Kumulative Länge ≤ Diameter	Kumulative Länge ≤ 2*Durchmesser	N / A
Orangenschale/Pits/Flecken/Streifen/Risse/Kontamination	Keiner		N / A
Kantenchips/Eingeweide/Fraktur-/Sechskantplatten	Keiner
Polytyperbereiche	Keiner	Kumulative Fläche ≤ 2010TP3T	Kumulative Fläche ≤ 30%
Frontlasermarkierung	Keiner
Rückenqualität
Rückbeschluss	C-Face CMP
Kratzer	≤5ea/mm, kumulative Länge ≤ 2*Durchmesser	N / A
Rückenfehler (Kantenchips/Eingebiete)	Keiner
Rückenrauheit	Ra ≤ 0,2 nm (5 & mgr; m*5 μm)
Rückmarkierung von Laser	1 mm (von der Oberkante)
Rand
Rand	Chamfer
Packaging
Packaging	Epi-ready with vacuum packaging Multi-wafer cassette packaging
*Notes： “NA” means no request Items not mentioned may refer to SEMI-STD.