CFC Application for Semiconductor Thermal Field Components – Monocrystalline Silicon/SiC Growth Furnaces
2026-04-29
CFC carbon-carbon composite materials, boasting exceptional purity, high-temperature resistance, low thermal expansion, superior thermal conductivity, Und minimal impurity precipitation, are specifically engineered for monocrystalline silicon and silicon carbide (SiC) crystal growth furnaces. They provide a comprehensive range of high-temperature thermal field components that replace traditional graphite parts, optimizing performance for advanced semiconductor and photovoltaic crystal growth processes while addressing critical challenges such as high-temperature deformation, impurity contamination, thermal field instability, and shortened service life.
