Silicon Wafer

Semicera Silicon Wafers are the cornerstone of modern semiconductor devices, offering unmatched purity and precision. Designed to meet the stringent demands of high-tech industries, these wafers ensure reliable performance and consistent quality. Trust Semicera for your cutting-edge electronic applications and innovative technology solutions.

Semicera Silicon Wafers are meticulously crafted to serve as the foundation for a wide array of semiconductor devices, from microprocessors to photovoltaic cells. These wafers are engineered with high precision and purity, ensuring optimal performance in various electronic applications.

Manufactured using advanced techniques, Semicera Silicon Wafers exhibit exceptional flatness and uniformity, which are crucial for achieving high yields in semiconductor fabrication. This level of precision helps in minimizing defects and improving the overall efficiency of electronic components.

The superior quality of Semicera Silicon Wafers is evident in their electrical characteristics, which contribute to the enhanced performance of semiconductor devices. With low impurity levels and high crystal quality, these wafers provide the ideal platform for developing high-performance electronics.

Available in various sizes and specifications, Semicera Silicon Wafers can be tailored to meet the specific needs of different industries, including computing, telecommunications, and renewable energy. Whether for large-scale manufacturing or specialized research, these wafers deliver reliable results.

Semicera is committed to supporting the growth and innovation of the semiconductor industry by providing high-quality silicon wafers that meet the highest industry standards. With a focus on precision and reliability, Semicera enables manufacturers to push the boundaries of technology, ensuring their products stay at the forefront of the market.

Artikel

Produktion

Forschung

Dummy

Kristallparameter

Polytype

4H

Oberflächenorientierungsfehler

4±0.15°

Elektrische Parameter

Dopant

Stickstoff vom Typ N

Widerstand

0,015-0.025OHM · cm

Mechanische Parameter

Durchmesser

150,0 ± 0,2 mm

Dicke

350 ± 25 µm

Primäre flache Orientierung

[1-100]±5°

Primäre flache Länge

47,5 ± 1,5 mm

Sekundäre flache

Keiner

Ttv

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Bogen

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Kette

≤35 µm

≤45 µm

≤55 µm

Front (Si-Face) Rauheit (AFM)

Ra ≤ 0,2 nm (5 & mgr; m*5 μm)

Struktur

Mikropipe -Dichte

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

Metallverunreinigungen

≤5E10atoms/cm2

N / A

BPD

≤1500 EA/CM2

≤3000 EA/CM2

N / A

TSD

≤500 EA/CM2

≤1000 EA/CM2

N / A

Frontqualität

Front

Si

Oberflächenbeschaffung

Si-Face CMP

Partikel

≤60ea/Wafer (Größe ≥ 0,3 μm)

N / A

Kratzer

≤5ea/mm. Kumulative Länge ≤ Diameter

Kumulative Länge ≤ 2*Durchmesser

N / A

Orangenschale/Pits/Flecken/Streifen/Risse/Kontamination

Keiner

N / A

Kantenchips/Eingeweide/Fraktur-/Sechskantplatten

Keiner

Polytyperbereiche

Keiner

Kumulative Fläche ≤ 2010TP3T

Kumulative Fläche ≤ 30%

Frontlasermarkierung

Keiner

Rückenqualität

Rückbeschluss

C-Face CMP

Kratzer

≤5ea/mm, kumulative Länge ≤ 2*Durchmesser

N / A

Rückenfehler (Kantenchips/Eingebiete)

Keiner

Rückenrauheit

Ra ≤ 0,2 nm (5 & mgr; m*5 μm)

Rückmarkierung von Laser

1 mm (von der Oberkante)

Rand

Rand

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: “NA” means no request Items not mentioned may refer to SEMI-STD.

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SiC wafers

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