SiC-Coated Semiconductor Epitaxial Reactor for Epitaxial Reactor Chamber

Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.

Our company provides SiC coating process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.

 

Hauptmerkmale:

1. Hochreines SIC -beschichteter Graphit

2. Überlegener Wärmewiderstand und thermische Gleichmäßigkeit

3. Fine SiC crystal coated for a smooth surface

4. Hohe Haltbarkeit gegen chemische Reinigung

 

Barrel Susceptor (6)

Main Specifications of CVD-SIC Coating

SIC-CVD-Eigenschaften

Kristallstruktur FCC β phase
Dichte g/cm ³ 3.21
Härte Vickers Härte 2500
Körnung μm 2~10
Chemische Reinheit % 99.99995
Wärmekapazität J·kg-1 ·K-1 640
Sublimationstemperatur 2700
Felexurale Stärke MPa  (RT 4-point) 415
Young’ s Modulus Gpa (4pt bend, 1300℃) 430
Wärmeausdehnung (CTE) 10-6K-1 4.5
Wärmeleitfähigkeit (W/mk) 300

 

 

2--cvd-sic-purity---99-99995-_60366

5----sic-crystal_242127

SEMICERA -Arbeitsplatz

Semizelle Arbeitsplatz 2

Ausrüstungsmaschine

CNN -Verarbeitung, chemische Reinigung, CVD -Beschichtung

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