10x10mm Nonpolar M-plane Aluminum Substrate– Ideal for advanced optoelectronic applications, offering superior crystalline quality and stability in a compact, high-precision format.
Semicera’s 10 x 10 mm unpolarer M-Ebenen-Aluminiumsubstrat is meticulously designed to meet the exacting requirements of advanced optoelectronic applications. This substrate features a nonpolar M-plane orientation, which is critical for reducing polarization effects in devices such as LEDs and laser diodes, leading to enhanced performance and efficiency.
Der 10 x 10 mm unpolarer M-Ebenen-Aluminiumsubstrat is crafted with exceptional crystalline quality, ensuring minimal defect densities and superior structural integrity. This makes it an ideal choice for the epitaxial growth of high-quality III-nitride films, which are essential for the development of next-generation optoelectronic devices.
Semicera’s precision engineering ensures that each 10 x 10 mm unpolarer M-Ebenen-Aluminiumsubstrat offers consistent thickness and surface flatness, which are crucial for uniform film deposition and device fabrication. Additionally, the substrate’s compact size makes it suitable for both research and production environments, allowing for flexible use in a variety of applications. With its excellent thermal and chemical stability, this substrate provides a reliable foundation for the development of cutting-edge optoelectronic technologies.
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Artikel |
Produktion |
Forschung |
Dummy |
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Kristallparameter |
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Polytype |
4H |
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Oberflächenorientierungsfehler |
4±0.15° |
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Elektrische Parameter |
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Dopant |
Stickstoff vom Typ N |
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Widerstand |
0,015-0.025OHM · cm |
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Mechanische Parameter |
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Durchmesser |
150,0 ± 0,2 mm |
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Dicke |
350 ± 25 µm |
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Primäre flache Orientierung |
[1-100]±5° |
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Primäre flache Länge |
47,5 ± 1,5 mm |
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Sekundäre flache |
Keiner |
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Ttv |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Bogen |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
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Kette |
≤35 µm |
≤45 µm |
≤55 µm |
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Front (Si-Face) Rauheit (AFM) |
Ra ≤ 0,2 nm (5 & mgr; m*5 μm) |
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Struktur |
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Mikropipe -Dichte |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
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Metallverunreinigungen |
≤5E10atoms/cm2 |
N / A |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
N / A |
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TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
N / A |
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Frontqualität |
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Front |
Si |
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Oberflächenbeschaffung |
Si-Face CMP |
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Partikel |
≤60ea/Wafer (Größe ≥ 0,3 μm) |
N / A |
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Kratzer |
≤5ea/mm. Kumulative Länge ≤ Diameter |
Kumulative Länge ≤ 2*Durchmesser |
N / A |
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Orangenschale/Pits/Flecken/Streifen/Risse/Kontamination |
Keiner |
N / A |
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Kantenchips/Eingeweide/Fraktur-/Sechskantplatten |
Keiner |
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Polytyperbereiche |
Keiner |
Kumulative Fläche ≤ 2010TP3T |
Kumulative Fläche ≤ 30% |
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Frontlasermarkierung |
Keiner |
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Rückenqualität |
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Rückbeschluss |
C-Face CMP |
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Kratzer |
≤5ea/mm, kumulative Länge ≤ 2*Durchmesser |
N / A |
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Rückenfehler (Kantenchips/Eingebiete) |
Keiner |
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Rückenrauheit |
Ra ≤ 0,2 nm (5 & mgr; m*5 μm) |
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Rückmarkierung von Laser |
1 mm (von der Oberkante) |
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Rand |
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Rand |
Chamfer |
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Packaging |
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Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
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*Notes： “NA” means no request Items not mentioned may refer to SEMI-STD. |
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