30mm Aluminum Nitride Wafer Substrate– Elevate the performance of your electronic and optoelectronic devices with Semicera’s 30mm Aluminum Nitride Wafer Substrate, designed for exceptional thermal conductivity and high electrical insulation.
Semizelle is proud to present the 30 -mm -Aluminium -Nitrid -Wafer -Substrat, a top-tier material engineered to meet the stringent demands of modern electronic and optoelectronic applications. Aluminum Nitride (AlN) substrates are renowned for their outstanding thermal conductivity and electrical insulation properties, making them an ideal choice for high-performance devices.
Schlüsselmerkmale:
• Exceptional Thermal Conductivity: Der 30 -mm -Aluminium -Nitrid -Wafer -Substrat boasts a thermal conductivity of up to 170 W/mK, significantly higher than other substrate materials, ensuring efficient heat dissipation in high-power applications.
• High Electrical Insulation: With excellent electrical insulating properties, this substrate minimizes cross-talk and signal interference, making it ideal for RF and microwave applications.
• Mechanical Strength: Der 30 -mm -Aluminium -Nitrid -Wafer -Substrat offers superior mechanical strength and stability, ensuring durability and reliability even under rigorous operating conditions.
• Vielseitige Anwendungen: This substrate is perfect for use in high-power LEDs, laser diodes, and RF components, providing a robust and reliable foundation for your most demanding projects.
• Precision Fabrication: Semicera ensures that each wafer substrate is fabricated with the highest precision, offering uniform thickness and surface quality to meet the exacting standards of advanced electronic devices.
Maximize the efficiency and reliability of your devices with Semicera’s 30 -mm -Aluminium -Nitrid -Wafer -Substrat. Our substrates are designed to deliver superior performance, ensuring that your electronic and optoelectronic systems operate at their best. Trust Semicera for cutting-edge materials that lead the industry in quality and innovation.
|
Artikel |
Produktion |
Forschung |
Dummy |
|
Kristallparameter |
|||
|
Polytype |
4H |
||
|
Oberflächenorientierungsfehler |
4±0.15° |
||
|
Elektrische Parameter |
|||
|
Dopant |
Stickstoff vom Typ N |
||
|
Widerstand |
0,015-0.025OHM · cm |
||
|
Mechanische Parameter |
|||
|
Durchmesser |
150,0 ± 0,2 mm |
||
|
Dicke |
350 ± 25 µm |
||
|
Primäre flache Orientierung |
[1-100]±5° |
||
|
Primäre flache Länge |
47,5 ± 1,5 mm |
||
|
Sekundäre flache |
Keiner |
||
|
Ttv |
≤5 µm |
≤10 µm |
≤15 µm |
|
LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
|
Bogen |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
|
Kette |
≤35 µm |
≤45 µm |
≤55 µm |
|
Front (Si-Face) Rauheit (AFM) |
Ra ≤ 0,2 nm (5 & mgr; m*5 μm) |
||
|
Struktur |
|||
|
Mikropipe -Dichte |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
|
Metallverunreinigungen |
≤5E10atoms/cm2 |
N / A |
|
|
BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
N / A |
|
TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
N / A |
|
Frontqualität |
|||
|
Front |
Si |
||
|
Oberflächenbeschaffung |
Si-Face CMP |
||
|
Partikel |
≤60ea/Wafer (Größe ≥ 0,3 μm) |
N / A |
|
|
Kratzer |
≤5ea/mm. Kumulative Länge ≤ Diameter |
Kumulative Länge ≤ 2*Durchmesser |
N / A |
|
Orangenschale/Pits/Flecken/Streifen/Risse/Kontamination |
Keiner |
N / A |
|
|
Kantenchips/Eingeweide/Fraktur-/Sechskantplatten |
Keiner |
||
|
Polytyperbereiche |
Keiner |
Kumulative Fläche ≤ 2010TP3T |
Kumulative Fläche ≤ 30% |
|
Frontlasermarkierung |
Keiner |
||
|
Rückenqualität |
|||
|
Rückbeschluss |
C-Face CMP |
||
|
Kratzer |
≤5ea/mm, kumulative Länge ≤ 2*Durchmesser |
N / A |
|
|
Rückenfehler (Kantenchips/Eingebiete) |
Keiner |
||
|
Rückenrauheit |
Ra ≤ 0,2 nm (5 & mgr; m*5 μm) |
||
|
Rückmarkierung von Laser |
1 mm (von der Oberkante) |
||
|
Rand |
|||
|
Rand |
Chamfer |
||
|
Packaging |
|||
|
Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
||
|
*Notes： “NA” means no request Items not mentioned may refer to SEMI-STD. |
|||
