4″ 6″ High Purity Semi-Insulating SiC Ingot

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.

The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.

Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.

Available in both 4-inch and 6-inch sizes, Semicera’s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.

By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.

Artikel

Produktion

Forschung

Dummy

Kristallparameter

Polytype

4H

Oberflächenorientierungsfehler

4±0.15°

Elektrische Parameter

Dopant

Stickstoff vom Typ N

Widerstand

0,015-0.025OHM · cm

Mechanische Parameter

Durchmesser

150,0 ± 0,2 mm

Dicke

350 ± 25 µm

Primäre flache Orientierung

[1-100]±5°

Primäre flache Länge

47,5 ± 1,5 mm

Sekundäre flache

Keiner

Ttv

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Bogen

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Kette

≤35 µm

≤45 µm

≤55 µm

Front (Si-Face) Rauheit (AFM)

Ra ≤ 0,2 nm (5 & mgr; m*5 μm)

Struktur

Mikropipe -Dichte

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

Metallverunreinigungen

≤5E10atoms/cm2

N / A

BPD

≤1500 EA/CM2

≤3000 EA/CM2

N / A

TSD

≤500 EA/CM2

≤1000 EA/CM2

N / A

Frontqualität

Front

Si

Oberflächenbeschaffung

Si-Face CMP

Partikel

≤60ea/Wafer (Größe ≥ 0,3 μm)

N / A

Kratzer

≤5ea/mm. Kumulative Länge ≤ Diameter

Kumulative Länge ≤ 2*Durchmesser

N / A

Orangenschale/Pits/Flecken/Streifen/Risse/Kontamination

Keiner

N / A

Kantenchips/Eingeweide/Fraktur-/Sechskantplatten

Keiner

Polytyperbereiche

Keiner

Kumulative Fläche ≤ 2010TP3T

Kumulative Fläche ≤ 30%

Frontlasermarkierung

Keiner

Rückenqualität

Rückbeschluss

C-Face CMP

Kratzer

≤5ea/mm, kumulative Länge ≤ 2*Durchmesser

N / A

Rückenfehler (Kantenchips/Eingebiete)

Keiner

Rückenrauheit

Ra ≤ 0,2 nm (5 & mgr; m*5 μm)

Rückmarkierung von Laser

1 mm (von der Oberkante)

Rand

Rand

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: “NA” means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size

SiC wafers

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