Semicera’s 6 Inch Semi-Insulating HPSI SiC Wafers are engineered for maximum efficiency and reliability in high-performance electronics. These wafers feature excellent thermal and electrical properties, making them ideal for a variety of applications, including power devices and high-frequency electronics. Choose Semicera for superior quality and innovation.
Semicera’s 6 Inch Semi-Insulating HPSI SiC Wafers are designed to meet the rigorous demands of modern semiconductor technology. With exceptional purity and consistency, these wafers serve as a reliable foundation for developing high-efficiency electronic components.
These HPSI SiC wafers are known for their outstanding thermal conductivity and electrical insulation, which are critical for optimizing the performance of power devices and high-frequency circuits. The semi-insulating properties help in minimizing electrical interference and maximizing device efficiency.
The high-quality manufacturing process employed by Semicera ensures that each wafer has uniform thickness and minimal surface defects. This precision is essential for advanced applications such as radio frequency devices, power inverters, and LED systems, where performance and durability are key factors.
By leveraging state-of-the-art production techniques, Semicera provides wafers that not only meet but exceed industry standards. The 6-inch size offers flexibility in scaling up production, catering to both research and commercial applications in the semiconductor sector.
Choosing Semicera’s 6 Inch Semi-Insulating HPSI SiC Wafers means investing in a product that delivers consistent quality and performance. These wafers are part of Semicera’s commitment to advancing the capabilities of semiconductor technology through innovative materials and meticulous craftsmanship.
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Artikel |
Produktion |
Forschung |
Dummy |
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Kristallparameter |
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Polytype |
4H |
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Oberflächenorientierungsfehler |
4±0.15° |
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Elektrische Parameter |
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Dopant |
Stickstoff vom Typ N |
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Widerstand |
0,015-0.025OHM · cm |
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Mechanische Parameter |
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Durchmesser |
150,0 ± 0,2 mm |
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Dicke |
350 ± 25 µm |
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Primäre flache Orientierung |
[1-100]±5° |
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Primäre flache Länge |
47,5 ± 1,5 mm |
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Sekundäre flache |
Keiner |
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Ttv |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Bogen |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
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Kette |
≤35 µm |
≤45 µm |
≤55 µm |
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Front (Si-Face) Rauheit (AFM) |
Ra ≤ 0,2 nm (5 & mgr; m*5 μm) |
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Struktur |
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Mikropipe -Dichte |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
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Metallverunreinigungen |
≤5E10atoms/cm2 |
N / A |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
N / A |
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TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
N / A |
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Frontqualität |
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Front |
Si |
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Oberflächenbeschaffung |
Si-Face CMP |
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Partikel |
≤60ea/Wafer (Größe ≥ 0,3 μm) |
N / A |
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Kratzer |
≤5ea/mm. Kumulative Länge ≤ Diameter |
Kumulative Länge ≤ 2*Durchmesser |
N / A |
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Orangenschale/Pits/Flecken/Streifen/Risse/Kontamination |
Keiner |
N / A |
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Kantenchips/Eingeweide/Fraktur-/Sechskantplatten |
Keiner |
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Polytyperbereiche |
Keiner |
Kumulative Fläche ≤ 2010TP3T |
Kumulative Fläche ≤ 30% |
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Frontlasermarkierung |
Keiner |
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Rückenqualität |
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Rückbeschluss |
C-Face CMP |
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Kratzer |
≤5ea/mm, kumulative Länge ≤ 2*Durchmesser |
N / A |
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Rückenfehler (Kantenchips/Eingebiete) |
Keiner |
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Rückenrauheit |
Ra ≤ 0,2 nm (5 & mgr; m*5 μm) |
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Rückmarkierung von Laser |
1 mm (von der Oberkante) |
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Rand |
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Rand |
Chamfer |
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Packaging |
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Packaging |
Epi-ready with vacuum packaging Multi-wafer cassette packaging |
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*Notes： “NA” means no request Items not mentioned may refer to SEMI-STD. |
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