Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.
Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.
CVD SiC coating features a dense and uniform microstructure, offering outstanding high-temperature resistance, oxidation resistance, chemical inertness, and ultra-high purity. It exhibits excellent resistance to acids, alkalis, and organic reagents, while maintaining stable physical and chemical properties under demanding operating conditions.
Compared with high-purity graphite, which begins to oxidize at approximately 400°C, CVD SiC-coated graphite provides significantly enhanced protection against oxidation. Graphite oxidation can lead to particle generation, material degradation, contamination of vacuum chambers and surrounding equipment, and increased impurity levels within high-purity processing environments.
In contrast, the SiC coating remains chemically and physically stable at temperatures up to 1600°C, effectively protecting the graphite substrate and extending component service life. These advantages make CVD SiC-coated graphite an ideal material for demanding applications in semiconductor manufacturing, photovoltaic production, epitaxy, CVD processes, and other high-temperature industrial environments.
Semicera specializes in CVD SiC coating technology for graphite, ceramic, and other precision components. High-purity silicon carbide is deposited onto the substrate surface through a chemical vapor deposition process, forming a dense, pore-free, and highly adherent protective layer. The resulting SiC-coated components exhibit excellent resistance to high temperatures, oxidation, corrosion, and chemical erosion, while maintaining superior purity and long-term stability in demanding semiconductor and high-temperature process environments.
Designed for semiconductor epitaxy processes, the SiC-coated graphite susceptor provides excellent thermal uniformity, chemical resistance, and contamination control for high-performance wafer growth.
1. High-purity SiC-coated graphite
2. Überlegener Wärmewiderstand und thermische Gleichmäßigkeit
3. Fine SiC crystal coated for a smooth surface
4. Hohe Haltbarkeit gegen chemische Reinigung
| SiC-CVD | ||
| Dichte | (g/cc) | 3.21 |
| Flexural strength | (Mpa) | 470 |
| Thermal expansion | (10-6/K) | 4 |
| Wärmeleitfähigkeit | (W/mk) | 300 |
Supply Ability:
10000 Piece/Pieces per Month
Packaging & Delivery:
Packing: Standard & Strong Packing
Poly bag + Box + Carton + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lead Time:
| Quantity(Pieces) | 1 – 1000 | >1000 |
| Est. Time(days) | 15 | To be negotiated |
