Silicon carbide RTA carrier plate for semiconductor

Silicon carbide is a new type of ceramics with high cost performance and excellent material properties. Due to features like high strength and hardness, high temperature resistance, great thermal conductivity and chemical corrosion resistance, Silicon Carbide can almost withstand all chemical medium. Therefore, SiC are widely used in oil mining, chemical, machinery and airspace, even nuclear energy and the military have their special demands on SIC. Some normal application we can offer are seal rings for pump, valve and protective armor etc.We are able to design and manufacture according to your specific dimensions with good quality and reasonable deliver time.

Beschreibung

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.

Hauptmerkmale

1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 C.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.

Main Specifications of CVD-SIC Coating

SIC-CVD-Eigenschaften

Kristallstruktur FCC -β -Phase
Dichte g/cm ³ 3.21
Härte Vickers Härte 2500
Körnung mm 2~10
Chemische Reinheit % 99.99995
Wärmekapazität J · kg-1 · k-1 640
Sublimationstemperatur 2700
Felexurale Stärke MPA (RT 4-Punkt) 415
Young’ s Modulus GPA (4PT Bend, 1300 ℃) 430
Wärmeausdehnung (CTE) 10-6K-1 4.5
Wärmeleitfähigkeit (W/mk) 300

SEMICERA -Arbeitsplatz

Semizelle Arbeitsplatz 2

Ausrüstungsmaschine

CNN -Verarbeitung, chemische Reinigung, CVD -Beschichtung

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