Wafer boats are key components in the semiconductor manufacturing process. Semiera is able to provide wafer boats that are specially designed and produced for diffusion processes, which play a vital role in the manufacture of high integrated circuits. We are firmly committed to providing the highest quality products at competitive prices and look forward to becoming your long-term partner in China.
Hochtemperaturoxidationswiderstand
Hervorragende Korrosionsbeständigkeit
Gute Abriebfestigkeit
Hoher Wärmungsleitfähigkeitskoeffizient
Selbstglagen, geringe Dichte
Hohe Härte
Individuelles Design.
-Verschleiß-resistentes Feld: Buchse, Platte, Sandstrahldüse, Zyklonauskleidung, Schleiflauf usw.…
-Hochtemperaturfeld: SIC -Platte, Quenching -Ofenrohr, Strahlungsrohr, Tiegel, Heizelement, Walzen, Strahl, Wärmetauscher, Kaltluftrohr, Brennerdüse, Thermoelenteils -Schutzrohr, SIC -Boot, Kilnauto -Struktur, Setter usw.
-Siliziumcarbid -Halbleiter: SiC -Waferboot, SIC -Chuck, SIC -Paddel, SiC -Kassette, SiC -Diffusionsrohr, Wafergabel, Saugschild, Führungsanleitung usw.
-Siliziumkarbiddichtungsfeld: Alle Arten von Dichtungsring, Lager, Buchse usw.
-Photovoltaikfeld: Ausleger Paddel, Schleiflauf, Siliziumkarbidwalze usw.
-Lithiumbatteriefeld
| Property | Wert | Method |
| Density | 3.21 g/cc | Sink-float and dimension |
| Specific heat | 0.66 J/g °K | Pulsed laser flash |
| Flexural strength | 450 MPa560 MPa | 4 point bend, RT4 point bend, 1300° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Hardness | 2800 | Vicker’s, 500g load |
| Elastic ModulusYoung’s Modulus | 450 GPa430 GPa | 4 pt bend, RT4 pt bend, 1300 °C |
| Grain size | 2 – 10 µm | SEM |
| Thermal Conductivity | 250 W/m °K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 °K | Room temp to 950 °C, silica dilatometer |
| Item | Einheit | Data | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC content | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Free silicon content | % | 15 | 0 | 0 | 0 | 0 |
| Max service temperature | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Density | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Open porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Bending strength 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Bending strength 1200℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200℃ | W/m.K | 45 | 19.6 | 100-120 | 36.6 | / |
| Coefficient of thermal expansion | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.
