Wafer Cassette

Wafer Cassette– Precision-engineered for the safe handling and storage of semiconductor wafers, ensuring optimal protection and cleanliness throughout the manufacturing process.

Semicera’s Wafer Cassette is a critical component in the semiconductor manufacturing process, designed to securely hold and transport delicate semiconductor wafers. The Wafer Cassette provides exceptional protection, ensuring that each wafer is kept free from contaminants and physical damage during handling, storage, and transportation.

Constructed with high-purity, chemical-resistant materials, the Semicera Wafer Cassette guarantees the highest levels of cleanliness and durability, essential for maintaining the integrity of wafers at every stage of production. The precision engineering of these cassettes allows for seamless integration with automated handling systems, minimizing the risk of contamination and mechanical damage.

The design of the Wafer Cassette also supports optimal airflow and temperature control, which is crucial for processes that require specific environmental conditions. Whether used in cleanrooms or during thermal processing, the Semicera Wafer Cassette is engineered to meet the stringent demands of the semiconductor industry, providing reliable and consistent performance to enhance manufacturing efficiency and product quality.

Artikel

Produktion

Forschung

Dummy

Kristallparameter

Polytype

4H

Oberflächenorientierungsfehler

4±0.15°

Elektrische Parameter

Dopant

Stickstoff vom Typ N

Widerstand

0,015-0.025OHM · cm

Mechanische Parameter

Durchmesser

150,0 ± 0,2 mm

Dicke

350 ± 25 µm

Primäre flache Orientierung

[1-100]±5°

Primäre flache Länge

47,5 ± 1,5 mm

Sekundäre flache

Keiner

Ttv

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Bogen

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45 μm ~ 45 μm

Kette

≤35 µm

≤45 µm

≤55 µm

Front (Si-Face) Rauheit (AFM)

Ra ≤ 0,2 nm (5 & mgr; m*5 μm)

Struktur

Mikropipe -Dichte

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

Metallverunreinigungen

≤5E10atoms/cm2

N / A

BPD

≤1500 EA/CM2

≤3000 EA/CM2

N / A

TSD

≤500 EA/CM2

≤1000 EA/CM2

N / A

Frontqualität

Front

Si

Oberflächenbeschaffung

Si-Face CMP

Partikel

≤60ea/Wafer (Größe ≥ 0,3 μm)

N / A

Kratzer

≤5ea/mm. Kumulative Länge ≤ Diameter

Kumulative Länge ≤ 2*Durchmesser

N / A

Orangenschale/Pits/Flecken/Streifen/Risse/Kontamination

Keiner

N / A

Kantenchips/Eingeweide/Fraktur-/Sechskantplatten

Keiner

Polytyperbereiche

Keiner

Kumulative Fläche ≤ 2010TP3T

Kumulative Fläche ≤ 30%

Frontlasermarkierung

Keiner

Rückenqualität

Rückbeschluss

C-Face CMP

Kratzer

≤5ea/mm, kumulative Länge ≤ 2*Durchmesser

N / A

Rückenfehler (Kantenchips/Eingebiete)

Keiner

Rückenrauheit

Ra ≤ 0,2 nm (5 & mgr; m*5 μm)

Rückmarkierung von Laser

1 mm (von der Oberkante)

Rand

Rand

Chamfer

Packaging

Packaging

Epi-ready with vacuum packaging

Multi-wafer cassette packaging

*Notes: “NA” means no request Items not mentioned may refer to SEMI-STD.

tech_1_2_size

SiC wafers

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