CFC Application for Semiconductor Thermal Field Components – Monocrystalline Silicon/SiC Growth Furnaces

CFC carbon-carbon composite materials, boasting exceptional purity, high-temperature resistance, low thermal expansion, superior thermal conductivity, Und minimal impurity precipitation, are specifically engineered for monocrystalline silicon and silicon carbide (SiC) crystal growth furnaces. They provide a comprehensive range of high-temperature thermal field components that replace traditional graphite parts, optimizing performance for advanced semiconductor and photovoltaic crystal growth processes while addressing critical challenges such as high-temperature deformation, impurity contamination, thermal field instability, and shortened service life.

Porous Graphite: The Heart of Silicon Carbide Crystal Growth

SiC crystal growth faces challenges such as high difficulty, lengthy R&D cycles, and elevated costs, posing major challenges in reducing costs, increasing production volume, and improving quality. Porous graphite emerges as the optimal solution to this issue.

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