Silicon Carbide (SiC) wafer susceptor is one of the key components used in the Metal Organic Chemical Vapor Deposition (MOCVD) process. Its main role is to monitor and control key parameters in the MOCVD process to ensure the growth quality and uniformity of the thin film.
The Silicon Carbide (SiC) Wafer Susceptors for MOCVD from semicera are designed for advanced epitaxial processes, offering superior performance for both Si Epitaxy and SiC Epitaxy applications. Semicera’s innovative approach ensures these susceptors are durable and efficient, providing stability and precision for critical manufacturing operations.
Engineered to support the intricate needs of MOCVD Susceptor systems, these products are versatile, compatible with carriers like PSS Etching Carrier, ICP Etching Carrier, and RTP Carrier. Their flexibility makes them suitable for high-tech industries, including those working with LED Epitaxial Susceptor and Monocrystalline Silicon.
With multiple configurations, including Barrel Susceptor and Pancake Susceptor, these wafer susceptors are also essential in the photovoltaic sector, supporting Photovoltaic Parts manufacturing. For semiconductor manufacturers, the capability to handle GaN on SiC Epitaxy processes makes these susceptors highly valuable for ensuring high-quality output across a wide range of applications.
1. Alta pureza Grafito recubierto de SIC
2. Resistencia al calor superior y uniformidad térmica
3. Fine SiC crystal coated for a smooth surface
4. Alta durabilidad contra la limpieza química
| Sic-cvd | ||
| Densidad | (g/cc) | 3.21 |
| Resistencia a la flexión | (MPA) | 470 |
| Expansión térmica | (10-6/K) | 4 |
| Conductividad térmica | (W/mk) | 300 |
Capacidad de suministro:
10000 piezas/piezas por mes
Embalaje y entrega:
Embalaje: embalaje estándar y fuerte
Poly Bag + Box + Carton + Pallet
Puerto:
Ningbo/Shenzhen/Shanghai
Tiempo de entrega:
|
Cantidad (piezas) |
1-1000 |
>1000 |
| Est. Tiempo (días) | 30 | To be negotiated |
