TaC Coated Deep UV LED MOCVD Graphite Susceptor

The TaC Coated Deep UV LED MOCVD Graphite Susceptor by Semicera is designed for superior performance in MOCVD epitaxy applications. Manufactured in China, it offers enhanced durability and higher temperature resistance, making it ideal for demanding conditions. Semicera’s advanced coating technology ensures reliable and efficient operation, supporting high-quality Deep UV LED production.

TaC coated deep ultraviolet LED graphite base refers to the process of improving the performance and stability of the device by depositing a TaC coating on the graphite base during the preparation of the deep ultraviolet LED device. This coating can improve the heat dissipation performance, high temperature resistance and oxidation resistance of the device, thereby improving the efficiency and reliability of the LED device. Deep ultraviolet LED devices are usually used in some special fields, such as disinfection, light curing, etc., which have high requirements for the stability and performance of the device. The application of TaC coated graphite base can effectively enhance the durability and performance of the device, providing important support for the development of deep ultraviolet LED technology.

 

Semicera propose des revêtements de carbure de tantale (TAC) spécialisés pour divers composants et transporteurs. Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.

 

After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.

Revocation de carbure de Tantalum à haute efficacité_ Améliorez l'efficacité de la production industrielle et réduisez les coûts de maintenance Image en vedette

Partie tac pour la croissance monocristal

Le revêtement en carbure de Tantalum anti-vêtements protège l'équipement de l'usure et de la corrosion Image

Graphite avec anneau revêtu de TAC

微信图片_20240227150045

avec et sans tac

微信图片_20240227150053

Après avoir utilisé TAC (à droite)

Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:

 

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Suspritur enduit de tac

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Graphite avec réacteur enduit TAC

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Lieu de travail Semiera

Semirara Lieu de travail 2

Machine de matériel

Maison des articles semira

Traitement CNN, nettoyage chimique, revêtement CVD

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