Thermal field material for silicon carbide crystal growth – porous tantalum carbide

Porous tantalum carbide is mainly used for gas phase component filtration, adjusting local temperature gradient, guiding material flow direction, controlling leakage, etc. It can be used with another solid tantalum carbide (compact) or tantalum carbide coating from Semicera Technology to form local components with different flow conductance.

Semicera는 다양한 구성 요소 및 캐리어를위한 특수 탄탈 카바이드 (TAC) 코팅을 제공합니다. Semicera 주요 코팅 공정은 탄탈 럼 탄화물 (TAC) 코팅을 가능하게하여 고순도, 고온 안정성 및 높은 화학적 내성을 달성하여 SIC/GAN 결정 및 EPI 층의 생성물 품질을 향상시킵니다.흑연 코팅 된 TAC 감수기), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.

 

수년간의 개발 후 Semicera는 다음과 같은 기술을 정복했습니다. CVD TAC R & D 부서의 공동 노력으로. 결함은 SIC 웨이퍼의 성장 과정에서 쉽게 발생하지만 사용 후 TAC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Semicera’ parts for single crystal growth 

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TAC 유무에 관계없이

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TAC를 사용한 후 (오른쪽)

In addition, the service life of Semicera’s TaC coating products is longer and more resistant to high temperature than that of SiC coating. After a long time of laboratory measurement data, our TaC can work for a long time at a maximum of 2300 degrees Celsius. The following are some of our samples:

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(a) Schematic diagram of SiC single crystal ingot growing device by PVT method (b) Top TaC coated seed bracket (including SiC seed) (c) TAC-coated graphite guide ring

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Main feature

세미 케라 작업 장소

Semicera Work Place 2

장비 기계

CNN 가공, 화학 세정, CVD 코팅

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