Silicon carbide is a new type of ceramics with high cost performance and excellent material properties. Due to features like high strength and hardness, high temperature resistance, great thermal conductivity and chemical corrosion resistance, Silicon Carbide can almost withstand all chemical medium. Therefore, SiC are widely used in oil mining, chemical, machinery and airspace, even nuclear energy and the military have their special demands on SIC. Some normal application we can offer are seal rings for pump, valve and protective armor etc.
Oxidatieweerstand op hoge temperatuur
Uitstekende corrosieweerstand
Goede slijtvastheid
Hoge warmtecoëfficiëntgeleidbaarheid
Zelfmacht, lage dichtheid
Hoge hardheid
Aangepast ontwerp.
-Wear-resistent veld: bus, plaat, zandstraalmondstuk, cycloon voering, slijpvat, enz…
-Hoogtemperatuurveld: SIC -plaat, blussende ovenbuis, stralende buis, smeltkroes, verwarmingselement, roller, balk, warmtewisselaar, koude luchtpijp, brandermondstuk, thermokoppelbeveiligingsbuis, SIC -boot, ovenautostructuur, setter, enz.
-Siliconencarbide halfgeleider: sic wafer boot, sic chuck, sic paddle, sic cassette, sic diffusiebuis, wafers vork, zuigplaat, leidingway, enz.
-Silicium carbide afdichtingsveld: allerlei afdichtingsring, lager, bus, etc.
-Fotovoltaïsch veld: Cantilever -paddle, slijpvat, siliciumcarbide -roller, enz.
-Lithium -batterijveld
| Eigendom | Waarde | Method |
| Dikte | 3.21 g/cc | Sink-float and dimension |
| Specific heat | 0.66 J/g °K | Pulsed laser flash |
| Buigsterkte | 450 MPa560 MPa | 4 point bend, RT4 point bend, 1300° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Hardheid | 2800 | Vicker’s, 500g load |
| Elastic ModulusYoung’s Modulus | 450 GPa430 GPa | 4 pt bend, RT4 pt bend, 1300 °C |
| Grain size | 2 – 10 µm | SEM |
| Thermal Conductivity | 250 W/m °K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 °K | Room temp to 950 °C, silica dilatometer |
| Item | Eenheid | Data | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC content | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Free silicon content | % | 15 | 0 | 0 | 0 | 0 |
| Max service temperature | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Dikte | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Open porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Bending strength 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Bending strength 1200℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200℃ | W/m.K | 45 | 19.6 | 100-120 | 36.6 | / |
| Thermische expansiecoëfficiënt | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.
