10x10mm Nonpolar M-plane Aluminum Substrate– Ideal for advanced optoelectronic applications, offering superior crystalline quality and stability in a compact, high-precision format.
Semicera’s 10x10mm niet-polair m-vlak aluminium substraat is meticulously designed to meet the exacting requirements of advanced optoelectronic applications. This substrate features a nonpolar M-plane orientation, which is critical for reducing polarization effects in devices such as LEDs and laser diodes, leading to enhanced performance and efficiency.
The 10x10mm niet-polair m-vlak aluminium substraat is crafted with exceptional crystalline quality, ensuring minimal defect densities and superior structural integrity. This makes it an ideal choice for the epitaxial growth of high-quality III-nitride films, which are essential for the development of next-generation optoelectronic devices.
Semicera’s precision engineering ensures that each 10x10mm niet-polair m-vlak aluminium substraat offers consistent thickness and surface flatness, which are crucial for uniform film deposition and device fabrication. Additionally, the substrate’s compact size makes it suitable for both research and production environments, allowing for flexible use in a variety of applications. With its excellent thermal and chemical stability, this substrate provides a reliable foundation for the development of cutting-edge optoelectronic technologies.
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Items |
Productie |
Onderzoek |
Stom |
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Kristalparameters |
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Polytype |
4H |
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Oppervlakte -oriëntatiefout |
4±0.15° |
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Elektrische parameters |
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Dopant |
n-type stikstof |
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Weerstand |
0.015-0.025OHM · cm |
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Mechanische parameters |
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Diameter |
150,0 ± 0,2 mm |
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Dikte |
350 ± 25 µm |
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Primaire platte oriëntatie |
[1-100]±5° |
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Primaire platte lengte |
47,5 ± 1,5 mm |
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Secundaire flat |
Geen |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Boog |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45μm ~ 45 urm |
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Kronkelen |
≤35 µm |
≤45 µm |
≤55 µm |
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Voorste (si-face) ruwheid (AFM) |
Ra≤0,2 nm (5μm*5μm) |
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Structuur |
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Micropipe dichtheid |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
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Metaalonzuiverheden |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
NA |
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TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
NA |
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Voorste kwaliteit |
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Voorkant |
Si |
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Oppervlakte -afwerking |
Si-face CMP |
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Deeltjes |
≤60EA/wafer (grootte ≥ 0,3 μm) |
NA |
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Krassen |
≤5EA/mm. Cumulatieve lengte ≤diameter |
Cumulatieve lengte ≤2*diameter |
NA |
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Sinaasappelschil/putten/vlekken/strepen/scheuren/besmetting |
Geen |
NA |
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Edge -chips/inspringen/breuk/hexplaten |
Geen |
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Polytype -gebieden |
Geen |
Cumulatief gebied ≤20% |
Cumulatief gebied ≤30% |
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Laser markering vooraan |
Geen |
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Rugkwaliteit |
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Back Finish |
C-gezicht CMP |
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Krassen |
≤5ea/mm, cumulatieve lengte ≤2*diameter |
NA |
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Achterafwijkingen (randchips/inspringen) |
Geen |
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Terug ruwheid |
Ra≤0,2 nm (5μm*5μm) |
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Lasergrondbekleding |
1 mm (van bovenrand) |
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Rand |
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Rand |
Schuif |
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Verpakking |
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Verpakking |
Epi-ready met vacuümverpakkingen Multi-wafer cassette verpakking |
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*OPMERKINGEN: "NA" betekent dat er geen aanvraagitems die niet worden genoemd, verwijzen naar semi-STD. |
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