Semicera offers a wide range of 4H-8H SiC wafers. For many years, we have been a manufacturer and supplier of products to the semiconductor and photovoltaic industries. Our main products include: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings. Covering most European and American markets. We look forward to being your long-term partner in China.
Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.
Semicera energy can provide customers with high-quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; In addition, we can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets; We can also customize the epitaxial sheet according to the specific needs of customers, and there is no minimum order quantity.
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Items |
Productie |
Onderzoek |
Stom |
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Kristalparameters |
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Polytype |
4H |
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Oppervlakte -oriëntatiefout |
<11-20 >4±0.15° |
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Elektrische parameters |
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Dopant |
n-type stikstof |
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Weerstand |
0.015-0.025ohm·cm |
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Mechanische parameters |
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Diameter |
99.5 – 100mm |
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Dikte |
350±25 μm |
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Primaire platte oriëntatie |
[1-100]±5° |
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Primaire platte lengte |
32.5±1.5mm |
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Secondary flat position |
90° CW from primary flat ±5°. silicon face up |
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Secondary flat length |
18±1.5mm |
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TTV |
≤5 μm |
≤10 μm |
≤20 μm |
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LTV |
≤2 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
NA |
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Boog |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Kronkelen |
≤20 μm |
≤45 μm |
≤50 μm |
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Voorste (si-face) ruwheid (AFM) |
Ra≤0.2nm (5μm*5μm) |
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Structuur |
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Micropipe dichtheid |
≤1 ea/cm2 |
≤5 ea/cm2 |
≤10 ea/cm2 |
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Metaalonzuiverheden |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
NA |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
NA |
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Voorste kwaliteit |
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Voorkant |
Si |
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Oppervlakte -afwerking |
Si-face CMP |
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Deeltjes |
≤60ea/wafer (size≥0.3μm) |
NA |
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Krassen |
≤2ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
NA |
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Sinaasappelschil/putten/vlekken/strepen/scheuren/besmetting |
Geen |
NA |
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Edge -chips/inspringen/breuk/hexplaten |
Geen |
NA |
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Polytype -gebieden |
Geen |
Cumulative area≤20% |
Cumulative area≤30% |
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Laser markering vooraan |
Geen |
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Rugkwaliteit |
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Back Finish |
C-gezicht CMP |
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Krassen |
≤5ea/mm,Cumulative length≤2*Diameter |
NA |
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Achterafwijkingen (randchips/inspringen) |
Geen |
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Terug ruwheid |
Ra≤0.2nm (5μm*5μm) |
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Lasergrondbekleding |
1 mm (van bovenrand) |
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Rand |
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Rand |
Schuif |
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Verpakking |
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Verpakking |
The inner bag is filled with nitrogen and the outer bag is vacuumed. Multi-wafer cassette, epi-ready. |
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*OPMERKINGEN: "NA" betekent dat er geen aanvraagitems die niet worden genoemd, verwijzen naar semi-STD. |
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