8 Inch N-type SiC Wafer

Semicera’s 8 Inch N-type SiC Wafers are engineered for cutting-edge applications in high-power and high-frequency electronics. These wafers provide superior electrical and thermal properties, ensuring efficient performance in demanding environments. Semicera delivers innovation and reliability in semiconductor materials.

Semicera’s 8 Inch N-type SiC Wafers are at the forefront of semiconductor innovation, providing a solid base for the development of high-performance electronic devices. These wafers are designed to meet the rigorous demands of modern electronic applications, from power electronics to high-frequency circuits.

The N-type doping in these SiC wafers enhances their electrical conductivity, making them ideal for a wide range of applications, including power diodes, transistors, and amplifiers. The superior conductivity ensures minimal energy loss and efficient operation, which are critical for devices operating at high frequencies and power levels.

Semicera employs advanced manufacturing techniques to produce SiC wafers with exceptional surface uniformity and minimal defects. This level of precision is essential for applications that require consistent performance and durability, such as in aerospace, automotive, and telecommunications industries.

Incorporating Semicera’s 8 Inch N-type SiC Wafers into your production line provides a foundation for creating components that can withstand harsh environments and high temperatures. These wafers are perfect for applications in power conversion, RF technology, and other demanding fields.

Choosing Semicera’s 8 Inch N-type SiC Wafers means investing in a product that combines high-quality material science with precise engineering. Semicera is committed to advancing the capabilities of semiconductor technologies, offering solutions that enhance the efficiency and reliability of your electronic devices.

Items

Productie

Onderzoek

Stom

Kristalparameters

Polytype

4H

Oppervlakte -oriëntatiefout

4±0.15°

Elektrische parameters

Dopant

n-type stikstof

Weerstand

0.015-0.025OHM · cm

Mechanische parameters

Diameter

150,0 ± 0,2 mm

Dikte

350 ± 25 µm

Primaire platte oriëntatie

[1-100]±5°

Primaire platte lengte

47,5 ± 1,5 mm

Secundaire flat

Geen

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Boog

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45μm ~ 45 urm

Kronkelen

≤35 µm

≤45 µm

≤55 µm

Voorste (si-face) ruwheid (AFM)

Ra≤0,2 nm (5μm*5μm)

Structuur

Micropipe dichtheid

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

Metaalonzuiverheden

≤5E10atoms/cm2

NA

BPD

≤1500 EA/CM2

≤3000 EA/CM2

NA

TSD

≤500 EA/CM2

≤1000 EA/CM2

NA

Voorste kwaliteit

Voorkant

Si

Oppervlakte -afwerking

Si-face CMP

Deeltjes

≤60EA/wafer (grootte ≥ 0,3 μm)

NA

Krassen

≤5EA/mm. Cumulatieve lengte ≤diameter

Cumulatieve lengte ≤2*diameter

NA

Sinaasappelschil/putten/vlekken/strepen/scheuren/besmetting

Geen

NA

Edge -chips/inspringen/breuk/hexplaten

Geen

Polytype -gebieden

Geen

Cumulatief gebied ≤20%

Cumulatief gebied ≤30%

Laser markering vooraan

Geen

Rugkwaliteit

Back Finish

C-gezicht CMP

Krassen

≤5ea/mm, cumulatieve lengte ≤2*diameter

NA

Achterafwijkingen (randchips/inspringen)

Geen

Terug ruwheid

Ra≤0,2 nm (5μm*5μm)

Lasergrondbekleding

1 mm (van bovenrand)

Rand

Rand

Schuif

Verpakking

Verpakking

Epi-ready met vacuümverpakkingen

Multi-wafer cassette verpakking

*OPMERKINGEN: "NA" betekent dat er geen aanvraagitems die niet worden genoemd, verwijzen naar semi-STD.

tech_1_2_size

Sic wafels

Nieuwbrief

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