Ga2O3Substrate– Unlock new possibilities in power electronics and optoelectronics with Semicera’s Ga2O3Substrate, engineered for exceptional performance in high-voltage and high-frequency applications.
Semicera is proud to present the GA2O3 Substrate, a cutting-edge material poised to revolutionize power electronics and optoelectronics. Gallium Oxide (Ga2O3) substrates are known for their ultra-wide bandgap, making them ideal for high-power and high-frequency devices.
Belangrijke functies:
• Ultra-Wide Bandgap: Ga2O3 offers a bandgap of approximately 4.8 eV, significantly enhancing its ability to handle high voltages and temperatures compared to traditional materials like Silicon and GaN.
• High Breakdown Voltage: With an exceptional breakdown field, the GA2O3 Substrate is perfect for devices requiring high-voltage operation, ensuring greater efficiency and reliability.
• Thermal Stability: The material’s superior thermal stability makes it suitable for applications in extreme environments, maintaining performance even under harsh conditions.
• Versatile Applications: Ideal for use in high-efficiency power transistors, UV optoelectronic devices, and more, providing a robust foundation for advanced electronic systems.
Experience the future of semiconductor technology with Semicera’s GA2O3 Substrate. Designed to meet the growing demands of high-power and high-frequency electronics, this substrate sets a new standard for performance and durability. Trust Semicera to deliver innovative solutions for your most challenging applications.
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Items |
Productie |
Onderzoek |
Stom |
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Kristalparameters |
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Polytype |
4H |
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Oppervlakte -oriëntatiefout |
4±0.15° |
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Elektrische parameters |
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Dopant |
n-type stikstof |
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Weerstand |
0.015-0.025OHM · cm |
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Mechanische parameters |
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Diameter |
150,0 ± 0,2 mm |
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Dikte |
350 ± 25 µm |
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Primaire platte oriëntatie |
[1-100]±5° |
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Primaire platte lengte |
47,5 ± 1,5 mm |
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Secundaire flat |
Geen |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Boog |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45μm ~ 45 urm |
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Kronkelen |
≤35 µm |
≤45 µm |
≤55 µm |
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Voorste (si-face) ruwheid (AFM) |
Ra≤0,2 nm (5μm*5μm) |
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Structuur |
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Micropipe dichtheid |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
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Metaalonzuiverheden |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
NA |
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TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
NA |
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Voorste kwaliteit |
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Voorkant |
Si |
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Oppervlakte -afwerking |
Si-face CMP |
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Deeltjes |
≤60EA/wafer (grootte ≥ 0,3 μm) |
NA |
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Krassen |
≤5EA/mm. Cumulatieve lengte ≤diameter |
Cumulatieve lengte ≤2*diameter |
NA |
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Sinaasappelschil/putten/vlekken/strepen/scheuren/besmetting |
Geen |
NA |
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Edge -chips/inspringen/breuk/hexplaten |
Geen |
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Polytype -gebieden |
Geen |
Cumulatief gebied ≤20% |
Cumulatief gebied ≤30% |
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Laser markering vooraan |
Geen |
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Rugkwaliteit |
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Back Finish |
C-gezicht CMP |
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Krassen |
≤5ea/mm, cumulatieve lengte ≤2*diameter |
NA |
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Achterafwijkingen (randchips/inspringen) |
Geen |
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Terug ruwheid |
Ra≤0,2 nm (5μm*5μm) |
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Lasergrondbekleding |
1 mm (van bovenrand) |
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Rand |
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Rand |
Schuif |
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Verpakking |
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Verpakking |
Epi-ready met vacuümverpakkingen Multi-wafer cassette verpakking |
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*OPMERKINGEN: "NA" betekent dat er geen aanvraagitems die niet worden genoemd, verwijzen naar semi-STD. |
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