Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.
Our company provides SiC coating process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.
1. Oxidatieweerstand op hoge temperatuur:
De oxidatieweerstand is nog steeds erg goed als de temperatuur zo hoog is als 1600 C.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. Erosiebestendigheid: hoge hardheid, compact oppervlak, fijne deeltjes.
4. Corrosieweerstand: zuur, alkali, zout en organische reagentia.
| SIC-CVD-eigenschappen | ||
| Kristalstructuur | FCC β phase | |
| Dikte | g/cm ³ | 3.21 |
| Hardheid | Vickers Hardheid | 2500 |
| Korrelgrootte | μm | 2~10 |
| Chemische zuiverheid | % | 99.99995 |
| Warmtecapaciteit | J·kg-1 ·K-1 | 640 |
| Sublimatietemperatuur | ℃ | 2700 |
| Felexurale kracht | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Thermische expansie (CTE) | 10-6K-1 | 4.5 |
| Thermische geleidbaarheid | (W/mk) | 300 |
