Silicon on Insulator Wafers

Semicera’s Silicon-on-Insulator wafers provide high-performance solutions for advanced semiconductor applications. Ideally suited for MEMS, sensors, and microelectronics, these wafers provide excellent electrical isolation and low parasitic capacitance. Semicera ensures precision manufacturing, delivering consistent quality for a range of innovative technologies. We look forward to being your long-term partner in China.

Silicon on Insulator Wafers from Semicera are designed to meet the growing demand for high-performance semiconductor solutions. Our SOI wafers offer superior electrical performance and reduced parasitic device capacitance, making them ideal for advanced applications such as MEMS devices, sensors, and integrated circuits. Semicera’s expertise in wafer production ensures that each SOI wafer provides reliable, high-quality results for your next-generation technology needs.

Our Silicon on Insulator Wafers offer an optimal balance between cost-effectiveness and performance. With soi wafer cost becoming increasingly competitive, these wafers are widely used in a range of industries, including microelectronics and optoelectronics. Semicera’s high-precision production process guarantees superior wafer bonding and uniformity, making them suitable for a variety of applications, from cavity SOI wafers to standard silicon wafers.

Belangrijke functies:

       •  High-quality SOI wafers optimized for performance in MEMS and other applications.

       •  Competitive soi wafer cost for businesses seeking advanced solutions without compromising quality.

       •  Ideal for cutting-edge technologies, offering enhanced electrical isolation and efficiency in silicon on insulator systems.

Our Silicon on Insulator Wafers are engineered to provide high-performance solutions, supporting the next wave of innovation in semiconductor technology. Whether you’re working on cavity SOI wafers, MEMS devices, or silicon on insulator components, Semicera delivers wafers that meet the highest standards in the industry.

Items

Productie

Onderzoek

Stom

Kristalparameters

Polytype

4H

Oppervlakte -oriëntatiefout

4±0.15°

Elektrische parameters

Dopant

n-type stikstof

Weerstand

0.015-0.025OHM · cm

Mechanische parameters

Diameter

150,0 ± 0,2 mm

Dikte

350 ± 25 µm

Primaire platte oriëntatie

[1-100]±5°

Primaire platte lengte

47,5 ± 1,5 mm

Secundaire flat

Geen

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5 mm*5 mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Boog

-15 μm ~ 15 μm

-35 μm ~ 35 μm

-45μm ~ 45 urm

Kronkelen

≤35 µm

≤45 µm

≤55 µm

Voorste (si-face) ruwheid (AFM)

Ra≤0,2 nm (5μm*5μm)

Structuur

Micropipe dichtheid

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

Metaalonzuiverheden

≤5E10atoms/cm2

NA

BPD

≤1500 EA/CM2

≤3000 EA/CM2

NA

TSD

≤500 EA/CM2

≤1000 EA/CM2

NA

Voorste kwaliteit

Voorkant

Si

Oppervlakte -afwerking

Si-face CMP

Deeltjes

≤60EA/wafer (grootte ≥ 0,3 μm)

NA

Krassen

≤5EA/mm. Cumulatieve lengte ≤diameter

Cumulatieve lengte ≤2*diameter

NA

Sinaasappelschil/putten/vlekken/strepen/scheuren/besmetting

Geen

NA

Edge -chips/inspringen/breuk/hexplaten

Geen

Polytype -gebieden

Geen

Cumulatief gebied ≤20%

Cumulatief gebied ≤30%

Laser markering vooraan

Geen

Rugkwaliteit

Back Finish

C-gezicht CMP

Krassen

≤5ea/mm, cumulatieve lengte ≤2*diameter

NA

Achterafwijkingen (randchips/inspringen)

Geen

Terug ruwheid

Ra≤0,2 nm (5μm*5μm)

Lasergrondbekleding

1 mm (van bovenrand)

Rand

Rand

Schuif

Verpakking

Verpakking

Epi-ready met vacuümverpakkingen

Multi-wafer cassette verpakking

*OPMERKINGEN: "NA" betekent dat er geen aanvraagitems die niet worden genoemd, verwijzen naar semi-STD.

tech_1_2_size

Sic wafels

Nieuwbrief

Ik kijk uit naar uw contact met ons