GaAs Wafers|GaAs Epi Wafers| Galllium Arsenide Substrates

Semicera Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables. We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing, photovoltaic industry and other related fields.Our product line includes SiC/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.At present,we are the only manufacturer to provide purity 99.9999% SiC coating and 99.9% recrystallized silicon carbide. The max SiC coating length we can do 2640mm.

GaAs-substrates(1)

GaAs substrates are divided into conductive and semi-insulating, which are widely used in laser (LD), semiconductor light-emitting diode (LED), near-infrared laser, quantum well high-power laser and high-efficiency solar panels. HEMT and HBT chips for radar, microwave, millimeter wave or ultra-high speed computers and optical communications; Radio frequency devices for wireless communication, 4G, 5G, satellite communication, WLAN.

Recently, gallium arsenide substrates have also made great progress in mini-LED, Micro-LED, and red LED, and are widely used in AR/VR wearable devices.

Średnica
晶片直径

50mm | 75mm | 100mm | 150mm

Growth Method
生长方式

LEC 液封直拉法
VGF 垂直梯度凝固法

Wafer Thickness
厚度

350 um ~ 625 um

Orientation
晶向

<100> / <111> / <110> or others

Conductive Type
导电类型

P – type / N – type / Semi-insulating

Type/Dopant
掺杂剂

Zn / Si / undoped

Carrier Concentration
载流子浓度

1E17 ~ 5E19 cm-3

Resistivity at RT
室温电阻率(ohm•cm)

≥1E7 for SI

Mobility
迁移率(cm2/V•Sec)

≥4000

EPD( Etch Pit Density )
腐蚀坑密度

100~1E5

TTV
总厚度变化

≤ 10 um

Bow / Warp
翘曲度

≤ 20 um

Surface Finish
表面

DSP/SSP

Laser Mark
激光码

 

Grade
等级

Epi polished grade / mechanical grade

Miejsce pracy półcesy Półcera robocza miejsce 2 Maszyna sprzętu Przetwarzanie CNN, czyszczenie chemiczne, powłoka CVD Nasza usługa

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