Wafer de 8 polegadas do tipo n do tipo

Semicera’s 8 Inch N-type SiC Wafers are engineered for cutting-edge applications in high-power and high-frequency electronics. These wafers provide superior electrical and thermal properties, ensuring efficient performance in demanding environments. Semicera delivers innovation and reliability in semiconductor materials.

Semicera’s 8 Inch N-type SiC Wafers are at the forefront of semiconductor innovation, providing a solid base for the development of high-performance electronic devices. These wafers are designed to meet the rigorous demands of modern electronic applications, from power electronics to high-frequency circuits.

The N-type doping in these SiC wafers enhances their electrical conductivity, making them ideal for a wide range of applications, including power diodes, transistors, and amplifiers. The superior conductivity ensures minimal energy loss and efficient operation, which are critical for devices operating at high frequencies and power levels.

Semicera employs advanced manufacturing techniques to produce SiC wafers with exceptional surface uniformity and minimal defects. This level of precision is essential for applications that require consistent performance and durability, such as in aerospace, automotive, and telecommunications industries.

Incorporating Semicera’s 8 Inch N-type SiC Wafers into your production line provides a foundation for creating components that can withstand harsh environments and high temperatures. These wafers are perfect for applications in power conversion, RF technology, and other demanding fields.

Choosing Semicera’s 8 Inch N-type SiC Wafers means investing in a product that combines high-quality material science with precise engineering. Semicera is committed to advancing the capabilities of semiconductor technologies, offering solutions that enhance the efficiency and reliability of your electronic devices.

Unid

Produção

Pesquisar

Fictício

Parâmetros de cristal

Polytype

4H

Erro de orientação da superfície

4±0.15°

Parâmetros elétricos

Dopante

nitrogênio do tipo n

Resistividade

0,015-0.025OHM · cm

Parâmetros mecânicos

Diâmetro

150,0 ± 0,2 mm

Grossura

350 ± 25 µm

Orientação plana primária

[1-100]±5°

Comprimento plano primário

47,5 ± 1,5 mm

Apartamento secundário

Nenhum

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Arco

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Urdidura

≤35 µm

≤45 µm

≤55 µm

A rugosidade frontal (Si-face) (AFM)

Ra≤0,2 nm (5μm*5μm)

Estrutura

Densidade de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / D

Bpd

≤1500 ea/cm2

≤3000 ea/cm2

N / D

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / D

Qualidade frontal

Frente

Si

Acabamento superficial

Si-face cmp

Partículas

≤60ea/wafer (size≥0,3μm)

N / D

Arranhões

≤5ea/mm. Comprimento cumulativo ≤DIAMETER

Comprimento cumulativo ≤2*diâmetro

N / D

Casca de laranja/poços/manchas/estrias/rachaduras/contaminação

Nenhum

N / D

Chips/recuos/fraturas/placas de fratura/placas hexadecimais

Nenhum

Áreas de poliateiro

Nenhum

Área cumulativa ≤20%

Área cumulativa ≤30%

Marcada a laser dianteira

Nenhum

Qualidade de volta

Final traseiro

CMP C-FACE

Arranhões

≤5ea/mm, comprimento cumulativo≤2*diâmetro

N / D

Defeitos traseiros (chips/recuos de borda)

Nenhum

Rugosidade de volta

Ra≤0,2 nm (5μm*5μm)

Marcação de laser traseiro

1 mm (da borda superior)

Borda

Borda

Chanfro

Embalagem

Embalagem

Epi pronto com embalagem a vácuo

Embalagem de cassetes de várias linhas

*Notas : “NA” significa que nenhum item de solicitação não mencionado pode se referir ao Semi-STD.

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