Silicon Carbide Coated Crystal Growth Susceptor

Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.

Nossa empresa fornece Revestimento sic process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.

 

Main features:

1 .High purity SiC coated graphite

2. Superior heat resistance & thermal uniformity

3. Fine SiC crystal coated for a smooth surface

4. High durability against chemical cleaning

 

Barrel Susceptor (6)

Main Specifications of CVD-SIC Coating

Propriedades SIC-CVD

Estrutura cristalina Fase β da FCC
Densidade g/cm ³ 3.21
Dureza Vickers dureza 2500
Tamanho de grão mm 2~10
Pureza química % 99.99995
Capacidade de calor J · kg-1 · k-1 640
Temperatura da sublimação 2700
Força felexural MPA (RT 4 pontos) 415
Módulo de Young GPA (4pt Bend, 1300 ℃) 430
Expansão térmica (CTE) 10-6K-1 4.5
Condutividade térmica (W/mk) 300

 

 

2--cvd-sic-purity---99-99995-_60366

5----sic-crystal_242127

Local de trabalho semicera

Local de trabalho semicera 2

Máquina de equipamentos

Processamento da CNN, limpeza química, revestimento de CVD

Nosso serviço

Newletter

Ansioso pelo seu contato conosco