30mm Aluminum Nitride Wafer Substrate– Elevate the performance of your electronic and optoelectronic devices with Semicera’s 30mm Aluminum Nitride Wafer Substrate, designed for exceptional thermal conductivity and high electrical insulation.
Semicera is proud to present the Substrato de bolas de nitreto de alumínio de 30 mm, a top-tier material engineered to meet the stringent demands of modern electronic and optoelectronic applications. Aluminum Nitride (AlN) substrates are renowned for their outstanding thermal conductivity and electrical insulation properties, making them an ideal choice for high-performance devices.
Principais recursos:
• Exceptional Thermal Conductivity: O Substrato de bolas de nitreto de alumínio de 30 mm boasts a thermal conductivity of up to 170 W/mK, significantly higher than other substrate materials, ensuring efficient heat dissipation in high-power applications.
• High Electrical Insulation: With excellent electrical insulating properties, this substrate minimizes cross-talk and signal interference, making it ideal for RF and microwave applications.
• Mechanical Strength: O Substrato de bolas de nitreto de alumínio de 30 mm offers superior mechanical strength and stability, ensuring durability and reliability even under rigorous operating conditions.
• Versatile Applications: This substrate is perfect for use in high-power LEDs, laser diodes, and RF components, providing a robust and reliable foundation for your most demanding projects.
• Precision Fabrication: Semicera ensures that each wafer substrate is fabricated with the highest precision, offering uniform thickness and surface quality to meet the exacting standards of advanced electronic devices.
Maximize the efficiency and reliability of your devices with Semicera’s Substrato de bolas de nitreto de alumínio de 30 mm. Our substrates are designed to deliver superior performance, ensuring that your electronic and optoelectronic systems operate at their best. Trust Semicera for cutting-edge materials that lead the industry in quality and innovation.
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Unid |
Produção |
Pesquisar |
Fictício |
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Parâmetros de cristal |
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Polytype |
4H |
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Erro de orientação da superfície |
4±0.15° |
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Parâmetros elétricos |
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Dopante |
nitrogênio do tipo n |
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Resistividade |
0,015-0.025OHM · cm |
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Parâmetros mecânicos |
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Diâmetro |
150,0 ± 0,2 mm |
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Grossura |
350 ± 25 µm |
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Orientação plana primária |
[1-100]±5° |
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Comprimento plano primário |
47,5 ± 1,5 mm |
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Apartamento secundário |
Nenhum |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5mm*5mm) |
≤5 μm (5mm*5mm) |
≤10 μm (5mm*5mm) |
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Arco |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Urdidura |
≤35 µm |
≤45 µm |
≤55 µm |
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A rugosidade frontal (Si-face) (AFM) |
Ra≤0,2 nm (5μm*5μm) |
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Estrutura |
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Densidade de micropipe |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Impurezas de metal |
≤5E10atoms/cm2 |
N / D |
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Bpd |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
N / D |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
N / D |
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Qualidade frontal |
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Frente |
Si |
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Acabamento superficial |
Si-face cmp |
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Partículas |
≤60ea/wafer (size≥0,3μm) |
N / D |
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Arranhões |
≤5ea/mm. Comprimento cumulativo ≤DIAMETER |
Comprimento cumulativo ≤2*diâmetro |
N / D |
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Casca de laranja/poços/manchas/estrias/rachaduras/contaminação |
Nenhum |
N / D |
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Chips/recuos/fraturas/placas de fratura/placas hexadecimais |
Nenhum |
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Áreas de poliateiro |
Nenhum |
Área cumulativa ≤20% |
Área cumulativa ≤30% |
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Marcada a laser dianteira |
Nenhum |
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Qualidade de volta |
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Final traseiro |
CMP C-FACE |
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Arranhões |
≤5ea/mm, comprimento cumulativo≤2*diâmetro |
N / D |
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Defeitos traseiros (chips/recuos de borda) |
Nenhum |
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Rugosidade de volta |
Ra≤0,2 nm (5μm*5μm) |
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Marcação de laser traseiro |
1 mm (da borda superior) |
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Borda |
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Borda |
Chanfro |
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Embalagem |
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Embalagem |
Epi pronto com embalagem a vácuo Embalagem de cassetes de várias linhas |
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*Notas : “NA” significa que nenhum item de solicitação não mencionado pode se referir ao Semi-STD. |
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