Semicera’s 4 Inch N-type SiC Substrates are meticulously designed for superior electrical and thermal performance in power electronics and high-frequency applications. These substrates offer excellent conductivity and stability, making them ideal for next-generation semiconductor devices. Trust Semicera for precision and quality in advanced materials.
Semicera’s 4 Inch N-type SiC Substrates are crafted to meet the exacting standards of the semiconductor industry. These substrates provide a high-performance foundation for a wide range of electronic applications, offering exceptional conductivity and thermal properties.
The N-type doping of these SiC substrates enhances their electrical conductivity, making them particularly suitable for high-power and high-frequency applications. This property allows for the efficient operation of devices such as diodes, transistors, and amplifiers, where minimizing energy loss is crucial.
Semicera utilizes state-of-the-art manufacturing processes to ensure that each substrate exhibits excellent surface quality and uniformity. This precision is critical for applications in power electronics, microwave devices, and other technologies that demand reliable performance under extreme conditions.
Incorporating Semicera’s N-type SiC substrates into your production line means benefiting from materials that offer superior heat dissipation and electrical stability. These substrates are ideal for creating components that require durability and efficiency, such as power conversion systems and RF amplifiers.
By choosing Semicera’s 4 Inch N-type SiC Substrates, you are investing in a product that combines innovative material science with meticulous craftsmanship. Semicera continues to lead the industry by providing solutions that support the development of cutting-edge semiconductor technologies, ensuring high performance and reliability.
|
Unid |
Produção |
Pesquisar |
Fictício |
|
Parâmetros de cristal |
|||
|
Polytype |
4H |
||
|
Erro de orientação da superfície |
4±0.15° |
||
|
Parâmetros elétricos |
|||
|
Dopante |
nitrogênio do tipo n |
||
|
Resistividade |
0,015-0.025OHM · cm |
||
|
Parâmetros mecânicos |
|||
|
Diâmetro |
150,0 ± 0,2 mm |
||
|
Grossura |
350 ± 25 µm |
||
|
Orientação plana primária |
[1-100]±5° |
||
|
Comprimento plano primário |
47,5 ± 1,5 mm |
||
|
Apartamento secundário |
Nenhum |
||
|
TTV |
≤5 µm |
≤10 µm |
≤15 µm |
|
LTV |
≤3 μm (5mm*5mm) |
≤5 μm (5mm*5mm) |
≤10 μm (5mm*5mm) |
|
Arco |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
|
Urdidura |
≤35 µm |
≤45 µm |
≤55 µm |
|
A rugosidade frontal (Si-face) (AFM) |
Ra≤0,2 nm (5μm*5μm) |
||
|
Estrutura |
|||
|
Densidade de micropipe |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
|
Impurezas de metal |
≤5E10atoms/cm2 |
N / D |
|
|
Bpd |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
N / D |
|
TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
N / D |
|
Qualidade frontal |
|||
|
Frente |
Si |
||
|
Acabamento superficial |
Si-face cmp |
||
|
Partículas |
≤60ea/wafer (size≥0,3μm) |
N / D |
|
|
Arranhões |
≤5ea/mm. Comprimento cumulativo ≤DIAMETER |
Comprimento cumulativo ≤2*diâmetro |
N / D |
|
Casca de laranja/poços/manchas/estrias/rachaduras/contaminação |
Nenhum |
N / D |
|
|
Chips/recuos/fraturas/placas de fratura/placas hexadecimais |
Nenhum |
||
|
Áreas de poliateiro |
Nenhum |
Área cumulativa ≤20% |
Área cumulativa ≤30% |
|
Marcada a laser dianteira |
Nenhum |
||
|
Qualidade de volta |
|||
|
Final traseiro |
CMP C-FACE |
||
|
Arranhões |
≤5ea/mm, comprimento cumulativo≤2*diâmetro |
N / D |
|
|
Defeitos traseiros (chips/recuos de borda) |
Nenhum |
||
|
Rugosidade de volta |
Ra≤0,2 nm (5μm*5μm) |
||
|
Marcação de laser traseiro |
1 mm (da borda superior) |
||
|
Borda |
|||
|
Borda |
Chanfro |
||
|
Embalagem |
|||
|
Embalagem |
Epi pronto com embalagem a vácuo Embalagem de cassetes de várias linhas |
||
|
*Notas ： “NA” significa que nenhum item de solicitação não mencionado pode se referir ao Semi-STD. |
|||
