Semiconductor Silicon based GaN epitaxy

A Semicera Energy Technology Co., Ltd. é um fornecedor líder de cerâmica avançada de semicondutores e o único fabricante na China que pode simultaneamente fornecer cerâmica de carboneto de silício de alta pureza (especialmente o sic recristalizado) e o revestimento CVD sic. Além disso, nossa empresa também está comprometida com campos de cerâmica, como alumina, nitreto de alumínio, zircônia e nitreto de silício, etc.

Silicon-based GaN epitaxy

Product Description

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.

Main features:

1. High temperature oxidation resistance:

the oxidation resistance is still very good when the temperature is as high as 1600 C.

2. High purity : made by chemical vapor deposition under high temperature chlorination condition.

3. Erosion resistance: high hardness, compact surface, fine particles.

4. Corrosion resistance: acid, alkali, salt and organic reagents.

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa  (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300

Local de trabalho semicera

Local de trabalho semicera 2

Máquina de equipamentos

Processamento da CNN, limpeza química, revestimento de CVD

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