SI epitaxia

Si Epitaxy– Achieve superior device performance with Semicera’s Si Epitaxy, offering precision-grown silicon layers for advanced semiconductor applications.

Semicera introduces its high-quality SI epitaxia services, designed to meet the exacting standards of today’s semiconductor industry. Epitaxial silicon layers are critical for the performance and reliability of electronic devices, and our Si Epitaxy solutions ensure that your components achieve optimal functionality.

Precision-Grown Silicon Layers Semicera understands that the foundation of high-performance devices lies in the quality of the materials used. Our SI epitaxia process is meticulously controlled to produce silicon layers with exceptional uniformity and crystal integrity. These layers are essential for applications ranging from microelectronics to advanced power devices, where consistency and reliability are paramount.

Optimized for Device Performance O SI epitaxia services offered by Semicera are tailored to enhance the electrical properties of your devices. By growing high-purity silicon layers with low defect densities, we ensure that your components perform at their best, with improved carrier mobility and minimized electrical resistivity. This optimization is critical for achieving the high-speed and high-efficiency characteristics demanded by modern technology.

Versatility in Applications Semicera’s SI epitaxia is suitable for a wide range of applications, including the production of CMOS transistors, power MOSFETs, and bipolar junction transistors. Our flexible process allows for customization based on the specific requirements of your project, whether you need thin layers for high-frequency applications or thicker layers for power devices.

Superior Material Quality Quality is at the heart of everything we do at Semicera. Our SI epitaxia process uses state-of-the-art equipment and techniques to ensure that each silicon layer meets the highest standards of purity and structural integrity. This attention to detail minimizes the occurrence of defects that could impact device performance, resulting in more reliable and longer-lasting components.

Commitment to Innovation Semicera is committed to staying at the forefront of semiconductor technology. Our SI epitaxia services reflect this commitment, incorporating the latest advancements in epitaxial growth techniques. We continuously refine our processes to deliver silicon layers that meet the evolving needs of the industry, ensuring that your products remain competitive in the market.

Tailored Solutions for Your Needs Understanding that every project is unique, Semicera offers customized SI epitaxia solutions to match your specific needs. Whether you require particular doping profiles, layer thicknesses, or surface finishes, our team works closely with you to deliver a product that meets your precise specifications.

Unid

Produção

Pesquisar

Fictício

Parâmetros de cristal

Polytype

4H

Erro de orientação da superfície

4±0.15°

Parâmetros elétricos

Dopante

nitrogênio do tipo n

Resistividade

0,015-0.025OHM · cm

Parâmetros mecânicos

Diâmetro

150,0 ± 0,2 mm

Grossura

350 ± 25 µm

Orientação plana primária

[1-100]±5°

Comprimento plano primário

47,5 ± 1,5 mm

Apartamento secundário

Nenhum

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Arco

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Urdidura

≤35 µm

≤45 µm

≤55 µm

A rugosidade frontal (Si-face) (AFM)

Ra≤0,2 nm (5μm*5μm)

Estrutura

Densidade de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / D

Bpd

≤1500 ea/cm2

≤3000 ea/cm2

N / D

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / D

Qualidade frontal

Frente

Si

Acabamento superficial

Si-face cmp

Partículas

≤60ea/wafer (size≥0,3μm)

N / D

Arranhões

≤5ea/mm. Comprimento cumulativo ≤DIAMETER

Comprimento cumulativo ≤2*diâmetro

N / D

Casca de laranja/poços/manchas/estrias/rachaduras/contaminação

Nenhum

N / D

Chips/recuos/fraturas/placas de fratura/placas hexadecimais

Nenhum

Áreas de poliateiro

Nenhum

Área cumulativa ≤20%

Área cumulativa ≤30%

Marcada a laser dianteira

Nenhum

Qualidade de volta

Final traseiro

CMP C-FACE

Arranhões

≤5ea/mm, comprimento cumulativo≤2*diâmetro

N / D

Defeitos traseiros (chips/recuos de borda)

Nenhum

Rugosidade de volta

Ra≤0,2 nm (5μm*5μm)

Marcação de laser traseiro

1 mm (da borda superior)

Borda

Borda

Chanfro

Embalagem

Embalagem

Epi pronto com embalagem a vácuo

Embalagem de cassetes de várias linhas

*Notas : “NA” significa que nenhum item de solicitação não mencionado pode se referir ao Semi-STD.

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