Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.
Our company provides SiC coating process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.
1. Resistência a oxidação de alta temperatura:
A resistência da oxidação ainda é muito boa quando a temperatura é tão alta quanto 1600 C.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. Resistência à erosão: alta dureza, superfície compacta, partículas finas.
4. Resistência à corrosão: ácido, álcalis, sal e reagentes orgânicos.
| Propriedades SIC-CVD | ||
| Estrutura cristalina | FCC β phase | |
| Densidade | g/cm ³ | 3.21 |
| Dureza | Vickers dureza | 2500 |
| Tamanho de grão | μm | 2~10 |
| Pureza química | % | 99.99995 |
| Capacidade de calor | J·kg-1 ·K-1 | 640 |
| Temperatura da sublimação | ℃ | 2700 |
| Força felexural | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Expansão térmica (CTE) | 10-6K-1 | 4.5 |
| Condutividade térmica | (W/mk) | 300 |
