Silicon nitride bonded silicon carbide pillar

Si3N4 bonded SiC as a new type refractory material,is used widely.The applying temperature is 1400 C.It has better thermal stability,thermal shock,which is better than plain refractory material.It also has anti-oxidation,high corrosion resistant,wear-resistance,high bending strength.It can resist corrosion and scouring,be no polluted and fast heat conduction in molten metal such as AL,Pb,Zn,Cu ect.

描述

Silicon nitride bonded silicon carbide

Si3N4 bonded SiC ceramic refractory material, is mixed with high pure SIC fine powder and Silicon powder, after slip casting course, reaction sintered under 1400~1500°C. During the sintering course, filling the high pure Nitrogen into the furnace, then the silicon will react with Nitrogen and generate Si3N4,So Si3N4 bonded SiC material is composed of silicon nitride (23%) and silicon carbide(75%) as main raw material,mixed with organic material,and shaped by mixture, extrusion or pouring,then made after drying and nitrogenization.

 

特点

Features and advantages:

1. High temperature tolerance
2.High thermal conductivity and shock resistance
3.High mechanical strength and abrasion resistance
4.Excellent energy efficiency and corrosion resistance

We provide high quality and precision machined NSiC ceramic components which process by

1.Slip casting
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing

Material Datasheet

>Chemical Composition Sic 75%
Si3N4 ≥23%
Free Si 0%
Densidade em massa (g/cm3) 2.702.80
Apparent porosity (%) 1215
Bend strength at 20 ℃(MPa) 180190
Bend strength at 1200 ℃(MPa) 207
Bend strength at 1350 ℃(MPa) 210
Compressive strength at 20 ℃(MPa) 580
Thermal conductivity at 1200 ℃(w/m.k) 19.6
Thermal expansion coefficient at1200 ℃(x 10-6/C) 4.70
Resistência ao choque térmico Excelente
Max. temperature (℃) 1600

Local de trabalho semicera Local de trabalho semicera 2 Máquina de equipamentos Processamento da CNN, limpeza química, revestimento de CVD Nosso serviço

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